Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy

Cheng Ying Tsai; Yang Zhang; Zheng Ju; Yong Hang Zhang

doi:10.1063/1.5144888

Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy

Cheng Ying Tsai, Yang Zhang, Zheng Ju, Yong Hang Zhang

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

It is known that the vertical hole mobility in superlattice structures, such as InAs/InAs1-xSbx type-II superlattices, is low and limits their photodetector performance. This paper reports the determination of vertical hole mobility in these superlattices with bandgaps in the mid-wave infrared range by using two methods based on steady-state and time-resolved photoluminescence measurements at 12 K-210 K. An ambipolar diffusion model is adopted to extract the hole mobility. The results show that the hole mobility first increases from 0.2 cm2/V s at 12 K and then levels off at ∼50 cm2/V s as the temperature exceeds ∼60 K.

Original language	English (US)
Article number	201108
Journal	Applied Physics Letters
Volume	116
Issue number	20
DOIs	https://doi.org/10.1063/1.5144888
State	Published - May 18 2020

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5144888

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@article{148648a7101348d2bc474cbad4c52486,

title = "Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy",

abstract = "It is known that the vertical hole mobility in superlattice structures, such as InAs/InAs1-xSbx type-II superlattices, is low and limits their photodetector performance. This paper reports the determination of vertical hole mobility in these superlattices with bandgaps in the mid-wave infrared range by using two methods based on steady-state and time-resolved photoluminescence measurements at 12 K-210 K. An ambipolar diffusion model is adopted to extract the hole mobility. The results show that the hole mobility first increases from 0.2 cm2/V s at 12 K and then levels off at ∼50 cm2/V s as the temperature exceeds ∼60 K. ",

author = "Tsai, {Cheng Ying} and Yang Zhang and Zheng Ju and Zhang, {Yong Hang}",

note = "Funding Information: The authors acknowledge the partial financial support from the Center for Semiconductor Modeling at the Boston University and the U.S. Army Research Laboratory (Grant No. W911NF-18-2-0027) and the U.S. Army Research Office (Grant Nos. W911NF-10-1-0524 and W911NF-19-1-0277). The authors also acknowledge the use of the high-resolution x-ray diffraction system in the LeRoy Eyring Center for Solid State Science at Arizona State University. Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = may,

day = "18",

doi = "10.1063/1.5144888",

language = "English (US)",

volume = "116",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy

AU - Tsai, Cheng Ying

AU - Zhang, Yang

AU - Ju, Zheng

AU - Zhang, Yong Hang

N1 - Funding Information: The authors acknowledge the partial financial support from the Center for Semiconductor Modeling at the Boston University and the U.S. Army Research Laboratory (Grant No. W911NF-18-2-0027) and the U.S. Army Research Office (Grant Nos. W911NF-10-1-0524 and W911NF-19-1-0277). The authors also acknowledge the use of the high-resolution x-ray diffraction system in the LeRoy Eyring Center for Solid State Science at Arizona State University. Publisher Copyright: © 2020 Author(s).

PY - 2020/5/18

Y1 - 2020/5/18

N2 - It is known that the vertical hole mobility in superlattice structures, such as InAs/InAs1-xSbx type-II superlattices, is low and limits their photodetector performance. This paper reports the determination of vertical hole mobility in these superlattices with bandgaps in the mid-wave infrared range by using two methods based on steady-state and time-resolved photoluminescence measurements at 12 K-210 K. An ambipolar diffusion model is adopted to extract the hole mobility. The results show that the hole mobility first increases from 0.2 cm2/V s at 12 K and then levels off at ∼50 cm2/V s as the temperature exceeds ∼60 K.

AB - It is known that the vertical hole mobility in superlattice structures, such as InAs/InAs1-xSbx type-II superlattices, is low and limits their photodetector performance. This paper reports the determination of vertical hole mobility in these superlattices with bandgaps in the mid-wave infrared range by using two methods based on steady-state and time-resolved photoluminescence measurements at 12 K-210 K. An ambipolar diffusion model is adopted to extract the hole mobility. The results show that the hole mobility first increases from 0.2 cm2/V s at 12 K and then levels off at ∼50 cm2/V s as the temperature exceeds ∼60 K.

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Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy

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