Study of uniformity of high performance AlInN HEMT with ultra-thin barrier

Xiang Gao, Daniel Gorka, Paul Saunier, Andrew Ketterson, Lin Zhou, David Smith, Shiping Guo

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process.

Original languageEnglish (US)
Pages (from-to)2081-2085
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number7-8
DOIs
StatePublished - Jul 1 2011

Keywords

  • AlInN
  • AlN
  • GaN
  • HEMT
  • High-performance

ASJC Scopus subject areas

  • Condensed Matter Physics

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