High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - Jul 1 2011|
ASJC Scopus subject areas
- Condensed Matter Physics