Study of uniformity of high performance AlInN HEMT with ultra-thin barrier

Xiang Gao; Daniel Gorka; Paul Saunier; Andrew Ketterson; Lin Zhou; David Smith; Shiping Guo

doi:10.1002/pssc.201001069

Study of uniformity of high performance AlInN HEMT with ultra-thin barrier

Xiang Gao, Daniel Gorka, Paul Saunier, Andrew Ketterson, Lin Zhou, David Smith, Shiping Guo

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process.

Original language	English (US)
Pages (from-to)	2081-2085
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.201001069
State	Published - Jul 1 2011

Keywords

AlInN
AlN
GaN
HEMT
High-performance

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201001069

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abstract = "High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process.",

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author = "Xiang Gao and Daniel Gorka and Paul Saunier and Andrew Ketterson and Lin Zhou and David Smith and Shiping Guo",

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T1 - Study of uniformity of high performance AlInN HEMT with ultra-thin barrier

AU - Gao, Xiang

AU - Gorka, Daniel

AU - Saunier, Paul

AU - Ketterson, Andrew

AU - Zhou, Lin

AU - Smith, David

AU - Guo, Shiping

PY - 2011/7/1

Y1 - 2011/7/1

N2 - High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process.

AB - High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process.

KW - AlInN

KW - AlN

KW - GaN

KW - HEMT

KW - High-performance

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ER -

Study of uniformity of high performance AlInN HEMT with ultra-thin barrier

Abstract

Keywords

ASJC Scopus subject areas

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