Study of the phase transition in heteroepitaxially grown films of αSn by Raman spectroscopy

José Menéndez, Hartmut Höchst

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Abstract

The transition in heteroepitaxially grown films of tin from the semiconducting (α) phase to the metallic (β) phase depends on the film thickness and the surface orientation. Investigations of the optical Raman phonon of α-Sn demonstrate that αSn films grown on InSb(001) surfaces show a sharp α ↔ β transition at a temperature T* which depends on the film thickness. For a film thickness of less than 60 nm the transformation occurs at T* = 115°C, which is much higher than the bulk T* value of 13.2°C. Evidence for the formation of β-Sn on (110) and (111) surfaces is given from Raman and reflection high energy electron diffraction investigations.

Original languageEnglish (US)
Pages (from-to)375-379
Number of pages5
JournalThin Solid Films
Volume111
Issue number4
DOIs
StatePublished - Jan 27 1984

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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