Abstract

We have investigated the GaP/Si heterojunction interface for application in silicon heterojunction solar cells. We performed X-ray photoelectron spectroscopy (XPS) on thin layers of GaP grown on Si by metal organic chemical vapor deposition and molecular beam epitaxy. The conduction band offset was determined to be 0.9 ± 0.2 eV, which is significantly higher than predicted by Anderson's rule (0.3 eV). XPS also revealed the presence of Ga–Si bonds at the interface that are likely to be the cause of the observed interface dipole. Via cross-sectional Kelvin probe force microscopy (x-KPFM), we observed a charge transport barrier at the Si/GaP interface which is consistent with the high-conduction band offset determined by XPS and explains the low open-circuit voltage and low fill factor observed in GaP/Si heterojunction solar cells.

Original languageEnglish (US)
JournalIEEE Journal of Photovoltaics
DOIs
StateAccepted/In press - Aug 10 2018

Fingerprint

Heterojunctions
heterojunctions
Solar cells
X ray photoelectron spectroscopy
solar cells
Conduction bands
photoelectron spectroscopy
Organic Chemicals
conduction bands
Organic chemicals
Silicon
Open circuit voltage
Molecular beam epitaxy
x rays
Charge transfer
Chemical vapor deposition
Microscopic examination
open circuit voltage
Metals
low voltage

Keywords

  • Band alignment
  • Doping
  • Heterojunctions
  • interface
  • Kelvin probe (KP) force microscopy
  • Microscopy
  • Molecular beam epitaxial growth
  • Photovoltaic cells
  • Silicon
  • silicon heterojunction (SHJ) solar cells
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Study of the Interface in a GaP/Si Heterojunction Solar Cell. / Saive, Rebecca; Emmer, Hal; Chen, Christopher T.; Zhang, Chaomin; Honsberg, Christiana; Atwater, Harry.

In: IEEE Journal of Photovoltaics, 10.08.2018.

Research output: Contribution to journalArticle

Saive, Rebecca ; Emmer, Hal ; Chen, Christopher T. ; Zhang, Chaomin ; Honsberg, Christiana ; Atwater, Harry. / Study of the Interface in a GaP/Si Heterojunction Solar Cell. In: IEEE Journal of Photovoltaics. 2018.
@article{0c5696f58581442ba1a8c011b28a06b4,
title = "Study of the Interface in a GaP/Si Heterojunction Solar Cell",
abstract = "We have investigated the GaP/Si heterojunction interface for application in silicon heterojunction solar cells. We performed X-ray photoelectron spectroscopy (XPS) on thin layers of GaP grown on Si by metal organic chemical vapor deposition and molecular beam epitaxy. The conduction band offset was determined to be 0.9 ± 0.2 eV, which is significantly higher than predicted by Anderson's rule (0.3 eV). XPS also revealed the presence of Ga–Si bonds at the interface that are likely to be the cause of the observed interface dipole. Via cross-sectional Kelvin probe force microscopy (x-KPFM), we observed a charge transport barrier at the Si/GaP interface which is consistent with the high-conduction band offset determined by XPS and explains the low open-circuit voltage and low fill factor observed in GaP/Si heterojunction solar cells.",
keywords = "Band alignment, Doping, Heterojunctions, interface, Kelvin probe (KP) force microscopy, Microscopy, Molecular beam epitaxial growth, Photovoltaic cells, Silicon, silicon heterojunction (SHJ) solar cells, X-ray photoelectron spectroscopy",
author = "Rebecca Saive and Hal Emmer and Chen, {Christopher T.} and Chaomin Zhang and Christiana Honsberg and Harry Atwater",
year = "2018",
month = "8",
day = "10",
doi = "10.1109/JPHOTOV.2018.2861724",
language = "English (US)",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
publisher = "IEEE Electron Devices Society",

}

TY - JOUR

T1 - Study of the Interface in a GaP/Si Heterojunction Solar Cell

AU - Saive, Rebecca

AU - Emmer, Hal

AU - Chen, Christopher T.

AU - Zhang, Chaomin

AU - Honsberg, Christiana

AU - Atwater, Harry

PY - 2018/8/10

Y1 - 2018/8/10

N2 - We have investigated the GaP/Si heterojunction interface for application in silicon heterojunction solar cells. We performed X-ray photoelectron spectroscopy (XPS) on thin layers of GaP grown on Si by metal organic chemical vapor deposition and molecular beam epitaxy. The conduction band offset was determined to be 0.9 ± 0.2 eV, which is significantly higher than predicted by Anderson's rule (0.3 eV). XPS also revealed the presence of Ga–Si bonds at the interface that are likely to be the cause of the observed interface dipole. Via cross-sectional Kelvin probe force microscopy (x-KPFM), we observed a charge transport barrier at the Si/GaP interface which is consistent with the high-conduction band offset determined by XPS and explains the low open-circuit voltage and low fill factor observed in GaP/Si heterojunction solar cells.

AB - We have investigated the GaP/Si heterojunction interface for application in silicon heterojunction solar cells. We performed X-ray photoelectron spectroscopy (XPS) on thin layers of GaP grown on Si by metal organic chemical vapor deposition and molecular beam epitaxy. The conduction band offset was determined to be 0.9 ± 0.2 eV, which is significantly higher than predicted by Anderson's rule (0.3 eV). XPS also revealed the presence of Ga–Si bonds at the interface that are likely to be the cause of the observed interface dipole. Via cross-sectional Kelvin probe force microscopy (x-KPFM), we observed a charge transport barrier at the Si/GaP interface which is consistent with the high-conduction band offset determined by XPS and explains the low open-circuit voltage and low fill factor observed in GaP/Si heterojunction solar cells.

KW - Band alignment

KW - Doping

KW - Heterojunctions

KW - interface

KW - Kelvin probe (KP) force microscopy

KW - Microscopy

KW - Molecular beam epitaxial growth

KW - Photovoltaic cells

KW - Silicon

KW - silicon heterojunction (SHJ) solar cells

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85052605738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052605738&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2018.2861724

DO - 10.1109/JPHOTOV.2018.2861724

M3 - Article

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

SN - 2156-3381

ER -