@inproceedings{650e8bda69524af98e289b954dce90fc,
title = "Study of surface and subsurface properties of Si(100) after hydrogen ion-beam exposure",
abstract = "The time/temperature dependencies of the surface roughness, subsurface extended defect formation, and minority-carrier lifetime are reported for n-type (100) silicon wafers exposed to a hydrogen ion beam. Surface roughness is assessed from atomic force microscopy, the distribution and nature of extended defects are determined from transmission electron microscopy, and the minority-carrier lifetime is evaluated by a non-contact laser-microwave technique. The surface roughness exhibits a weak dependence on ion-beam exposure time for the temperature range studied, whereas the distribution of extended defects may depend on exposure time at a given wafer temperature. The surface and bulk components of the minority-carrier lifetimes are consistent with these surface and subsurface properties. Transmission electron microscopy analyses demonstrate that the associated strain field of the extended defects is compressive in nature.",
author = "Liu, {H. X.} and Schneider, {T. P.} and J. Montgomery and Chen, {Y. L.} and A. Buczkowski and F. Shimura and Nemanich, {R. J.} and Maher, {D. M.} and D. Korzec and J. Engemann",
year = "1993",
month = dec,
day = "1",
language = "English (US)",
isbn = "1558992138",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "231--236",
editor = "Higashi, {Gregg S.} and Irene, {Eugene A.} and Tadahiro Ohmi",
booktitle = "Surface Chemical Cleaning and Passivation for Semiconductor Processing",
note = "Proceedings of the 1993 Spring Meeting of the Materials Research Society ; Conference date: 13-04-1993 Through 15-04-1993",
}