Study of surface and subsurface properties of Si(100) after hydrogen ion-beam exposure

H. X. Liu, T. P. Schneider, J. Montgomery, Y. L. Chen, A. Buczkowski, F. Shimura, R. J. Nemanich, D. M. Maher, D. Korzec, J. Engemann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The time/temperature dependencies of the surface roughness, subsurface extended defect formation, and minority-carrier lifetime are reported for n-type (100) silicon wafers exposed to a hydrogen ion beam. Surface roughness is assessed from atomic force microscopy, the distribution and nature of extended defects are determined from transmission electron microscopy, and the minority-carrier lifetime is evaluated by a non-contact laser-microwave technique. The surface roughness exhibits a weak dependence on ion-beam exposure time for the temperature range studied, whereas the distribution of extended defects may depend on exposure time at a given wafer temperature. The surface and bulk components of the minority-carrier lifetimes are consistent with these surface and subsurface properties. Transmission electron microscopy analyses demonstrate that the associated strain field of the extended defects is compressive in nature.

Original languageEnglish (US)
Title of host publicationSurface Chemical Cleaning and Passivation for Semiconductor Processing
EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
PublisherPubl by Materials Research Society
Pages231-236
Number of pages6
ISBN (Print)1558992138
StatePublished - Dec 1 1993
Externally publishedYes
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 13 1993Apr 15 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume315
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period4/13/934/15/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Liu, H. X., Schneider, T. P., Montgomery, J., Chen, Y. L., Buczkowski, A., Shimura, F., Nemanich, R. J., Maher, D. M., Korzec, D., & Engemann, J. (1993). Study of surface and subsurface properties of Si(100) after hydrogen ion-beam exposure. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 231-236). (Materials Research Society Symposium Proceedings; Vol. 315). Publ by Materials Research Society.