Study of subthreshold electron mobility behavior in SOI - MESFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The improvement in sub-threshold electron mobility behavior in SOI-MESFETs when compared to SOI and conventional MOSFET devices was investigated at Arizona State University. An in-house Ensemble Monte Carlo device simulator was used to perform extensive simulations of similar geometry SOI MOSFETs and Si MESFET channels. It was observed that in sub-threshold regime, the Schottky Junction Transistor (SJT) showed higher mobility with respect to bulk or SOI MOSFETs. The enhanced mobility in SOI MESFETs is expected to give rise to higher cut-off frequencies that will make them suitable for application in RF micropower circuit design.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages61-62
Number of pages2
DOIs
StatePublished - Dec 1 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Khan, T., Vasileska, D., & Thornton, T. (2004). Study of subthreshold electron mobility behavior in SOI - MESFETs. In Device Research Conference - Conference Digest, 62nd DRC (pp. 61-62). [III.-5] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367783