Study of subthreshold electron mobility behavior in SOI - MESFETs

T. Khan; Dragica Vasileska; Trevor Thornton

doi:10.1109/DRC.2004.1367783

Study of subthreshold electron mobility behavior in SOI - MESFETs

T. Khan, Dragica Vasileska, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The improvement in sub-threshold electron mobility behavior in SOI-MESFETs when compared to SOI and conventional MOSFET devices was investigated at Arizona State University. An in-house Ensemble Monte Carlo device simulator was used to perform extensive simulations of similar geometry SOI MOSFETs and Si MESFET channels. It was observed that in sub-threshold regime, the Schottky Junction Transistor (SJT) showed higher mobility with respect to bulk or SOI MOSFETs. The enhanced mobility in SOI MESFETs is expected to give rise to higher cut-off frequencies that will make them suitable for application in RF micropower circuit design.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	61-62
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367783
State	Published - Dec 1 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

ASJC Scopus subject areas

General Engineering

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10.1109/DRC.2004.1367783

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Khan, T, Vasileska, D & Thornton, T 2004, Study of subthreshold electron mobility behavior in SOI - MESFETs. in Device Research Conference - Conference Digest, 62nd DRC., III.-5, Device Research Conference - Conference Digest, DRC, pp. 61-62, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367783

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abstract = "The improvement in sub-threshold electron mobility behavior in SOI-MESFETs when compared to SOI and conventional MOSFET devices was investigated at Arizona State University. An in-house Ensemble Monte Carlo device simulator was used to perform extensive simulations of similar geometry SOI MOSFETs and Si MESFET channels. It was observed that in sub-threshold regime, the Schottky Junction Transistor (SJT) showed higher mobility with respect to bulk or SOI MOSFETs. The enhanced mobility in SOI MESFETs is expected to give rise to higher cut-off frequencies that will make them suitable for application in RF micropower circuit design.",

author = "T. Khan and Dragica Vasileska and Trevor Thornton",

year = "2004",

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doi = "10.1109/DRC.2004.1367783",

language = "English (US)",

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series = "Device Research Conference - Conference Digest, DRC",

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AU - Thornton, Trevor

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N2 - The improvement in sub-threshold electron mobility behavior in SOI-MESFETs when compared to SOI and conventional MOSFET devices was investigated at Arizona State University. An in-house Ensemble Monte Carlo device simulator was used to perform extensive simulations of similar geometry SOI MOSFETs and Si MESFET channels. It was observed that in sub-threshold regime, the Schottky Junction Transistor (SJT) showed higher mobility with respect to bulk or SOI MOSFETs. The enhanced mobility in SOI MESFETs is expected to give rise to higher cut-off frequencies that will make them suitable for application in RF micropower circuit design.

AB - The improvement in sub-threshold electron mobility behavior in SOI-MESFETs when compared to SOI and conventional MOSFET devices was investigated at Arizona State University. An in-house Ensemble Monte Carlo device simulator was used to perform extensive simulations of similar geometry SOI MOSFETs and Si MESFET channels. It was observed that in sub-threshold regime, the Schottky Junction Transistor (SJT) showed higher mobility with respect to bulk or SOI MOSFETs. The enhanced mobility in SOI MESFETs is expected to give rise to higher cut-off frequencies that will make them suitable for application in RF micropower circuit design.

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BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

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Study of subthreshold electron mobility behavior in SOI - MESFETs

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