Study of pit formation in MBE grown GaP on misoriented Si

Srinath Murali, Chaomin Zhang, Michael Goryll, Richard R. King, Christiana B. Honsberg

Research output: Contribution to journalArticle

Abstract

GaP-based alloys can be grown lattice-matched to Si, making them an attractive choice for use in Si-based multijunction solar cells. This work focuses on the growth of GaP on Si with the aim to improve the surface quality of GaP. The Si wafers used in this study were of precise (001), (001) 4° offcut toward [110], and (001) 6° offcut toward [110] orientations. GaP of high crystalline quality was grown, and high-resolution x-ray diffraction and atomic force microscopy (AFM) measurements revealed the presence of pits on the surface of GaP. Similar pits were also observed on surface of Si post growth when AFM imaging was done after chemically etching the GaP layers. The use of offcut wafers demonstrated a reduction in the pit density from over 100 μm-2 to values less than 1 μm-2 in both GaP and Si.

Original languageEnglish (US)
Article number032201
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume38
Issue number3
DOIs
StatePublished - May 1 2020

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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