Study of Open-Circuit Voltage in CdTe/MgCdTe Double-Heterostructure Solar Cells with Different Hole Contacts

Jia DIng, Yong Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports a comparison study of open-circuit voltage (VOC) in three kinds of CdTe/MgCdTe doubleheterostructure solar cells featuring p-type a-Si:H, ZnTe:As or ZnTe:Cu as hole contact layers, respectively. Devices with p-type a-Si:H demonstrated a record VOC of 1.1 V while the VOC of the devices with p-type ZnTe:As and ZnTe:Cu drop below 0.9 V C-V measurements and time-resolved photoluminescence measurements reveal built-in voltages (Vbi) of 1.20 V, 1.23 V and 0.90 V, and minority carrier lifetime 300 ns, 52 ns and 170 ns for devices with different types of hole contacts, respectively. For the devices with a ZnTe:As layer, an increase in nonradiative recombination rate and a reduction in VOC are observed due to the misfit dislocations at the ZnTe/MgCdTe interface. The low VOC seen in the devices with a ZnTe: Cu layer is mainly limited by their low Vbi.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages21-24
Number of pages4
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
CountryUnited States
CityChicago
Period6/16/196/21/19

Keywords

  • Cadmium telluride (CdTe)
  • double heterostructure
  • hole contact
  • open-circuit voltage

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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