TY - GEN
T1 - Study of Open-Circuit Voltage in CdTe/MgCdTe Double-Heterostructure Solar Cells with Different Hole Contacts
AU - DIng, Jia
AU - Zhang, Yong Hang
N1 - Funding Information:
This work is partially supported by the Department of Energy through Bay Area Photovoltaic Consortium DE-EE0004946 and Energy Efficiency and Renewable Energy DE-EE0007552
Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - This paper reports a comparison study of open-circuit voltage (VOC) in three kinds of CdTe/MgCdTe doubleheterostructure solar cells featuring p-type a-Si:H, ZnTe:As or ZnTe:Cu as hole contact layers, respectively. Devices with p-type a-Si:H demonstrated a record VOC of 1.1 V while the VOC of the devices with p-type ZnTe:As and ZnTe:Cu drop below 0.9 V C-V measurements and time-resolved photoluminescence measurements reveal built-in voltages (Vbi) of 1.20 V, 1.23 V and 0.90 V, and minority carrier lifetime 300 ns, 52 ns and 170 ns for devices with different types of hole contacts, respectively. For the devices with a ZnTe:As layer, an increase in nonradiative recombination rate and a reduction in VOC are observed due to the misfit dislocations at the ZnTe/MgCdTe interface. The low VOC seen in the devices with a ZnTe: Cu layer is mainly limited by their low Vbi.
AB - This paper reports a comparison study of open-circuit voltage (VOC) in three kinds of CdTe/MgCdTe doubleheterostructure solar cells featuring p-type a-Si:H, ZnTe:As or ZnTe:Cu as hole contact layers, respectively. Devices with p-type a-Si:H demonstrated a record VOC of 1.1 V while the VOC of the devices with p-type ZnTe:As and ZnTe:Cu drop below 0.9 V C-V measurements and time-resolved photoluminescence measurements reveal built-in voltages (Vbi) of 1.20 V, 1.23 V and 0.90 V, and minority carrier lifetime 300 ns, 52 ns and 170 ns for devices with different types of hole contacts, respectively. For the devices with a ZnTe:As layer, an increase in nonradiative recombination rate and a reduction in VOC are observed due to the misfit dislocations at the ZnTe/MgCdTe interface. The low VOC seen in the devices with a ZnTe: Cu layer is mainly limited by their low Vbi.
KW - Cadmium telluride (CdTe)
KW - double heterostructure
KW - hole contact
KW - open-circuit voltage
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U2 - 10.1109/PVSC40753.2019.8980668
DO - 10.1109/PVSC40753.2019.8980668
M3 - Conference contribution
AN - SCOPUS:85081629418
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 21
EP - 24
BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Y2 - 16 June 2019 through 21 June 2019
ER -