Study of low-efficiency droop in semipolar (2021) InGaN light-emitting diodes by time-resolved photoluminescence

Houqiang Fu, Zhijian Lu, Xin Hao Zhao, Yong-Hang Zhang, Steven P. DenBaars, Shuji Nakamura, Yuji Zhao

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The superior low-efficiency droop performance of semipolar (2021) InGaN light-emitting diodes (LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To unveil the mystery of this low droop and high efficiency, the emission dynamics of semipolar (2021) LEDs is investigated by time-resolved and steady-state photoluminescence (PL) measurements. Much smaller carrier lifetimes (radiative and nonradiative lifetime) were obtained from semipolar (2021) InGaN QWs compared with those on the -plane samples, possibly due to the reduced quantum-confined Stark effects and smaller indium fluctuation on semipolar InGaN samples. The experimental findings indicate a much reduced excess carrier density in semipolar (2021) InGaN LEDs, which will impact the device performance. Based on this, a modified ABC equation with weak phase-space-filling (PSF) effect was used to model the droop characteristics of semipolar (2021) LEDs.

Original languageEnglish (US)
Article number7390185
Pages (from-to)736-741
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume12
Issue number7
DOIs
StatePublished - Jul 1 2016

Fingerprint

Light emitting diodes
Photoluminescence
light emitting diodes
photoluminescence
Stark effect
Indium
Carrier lifetime
radiative lifetime
carrier lifetime
illuminating
Carrier concentration
indium
Lighting
Display devices
Color
solid state
color
life (durability)

Keywords

  • Efficiency droop
  • III-nitride
  • LEDs
  • Semipolar

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Study of low-efficiency droop in semipolar (2021) InGaN light-emitting diodes by time-resolved photoluminescence. / Fu, Houqiang; Lu, Zhijian; Zhao, Xin Hao; Zhang, Yong-Hang; DenBaars, Steven P.; Nakamura, Shuji; Zhao, Yuji.

In: IEEE/OSA Journal of Display Technology, Vol. 12, No. 7, 7390185, 01.07.2016, p. 736-741.

Research output: Contribution to journalArticle

Fu, Houqiang ; Lu, Zhijian ; Zhao, Xin Hao ; Zhang, Yong-Hang ; DenBaars, Steven P. ; Nakamura, Shuji ; Zhao, Yuji. / Study of low-efficiency droop in semipolar (2021) InGaN light-emitting diodes by time-resolved photoluminescence. In: IEEE/OSA Journal of Display Technology. 2016 ; Vol. 12, No. 7. pp. 736-741.
@article{366dcaf9403e41ff96daad61642ce1f3,
title = "Study of low-efficiency droop in semipolar (2021) InGaN light-emitting diodes by time-resolved photoluminescence",
abstract = "The superior low-efficiency droop performance of semipolar (2021) InGaN light-emitting diodes (LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To unveil the mystery of this low droop and high efficiency, the emission dynamics of semipolar (2021) LEDs is investigated by time-resolved and steady-state photoluminescence (PL) measurements. Much smaller carrier lifetimes (radiative and nonradiative lifetime) were obtained from semipolar (2021) InGaN QWs compared with those on the -plane samples, possibly due to the reduced quantum-confined Stark effects and smaller indium fluctuation on semipolar InGaN samples. The experimental findings indicate a much reduced excess carrier density in semipolar (2021) InGaN LEDs, which will impact the device performance. Based on this, a modified ABC equation with weak phase-space-filling (PSF) effect was used to model the droop characteristics of semipolar (2021) LEDs.",
keywords = "Efficiency droop, III-nitride, LEDs, Semipolar",
author = "Houqiang Fu and Zhijian Lu and Zhao, {Xin Hao} and Yong-Hang Zhang and DenBaars, {Steven P.} and Shuji Nakamura and Yuji Zhao",
year = "2016",
month = "7",
day = "1",
doi = "10.1109/JDT.2016.2521618",
language = "English (US)",
volume = "12",
pages = "736--741",
journal = "IEEE/OSA Journal of Display Technology",
issn = "1551-319X",
publisher = "IEEE Computer Society",
number = "7",

}

TY - JOUR

T1 - Study of low-efficiency droop in semipolar (2021) InGaN light-emitting diodes by time-resolved photoluminescence

AU - Fu, Houqiang

AU - Lu, Zhijian

AU - Zhao, Xin Hao

AU - Zhang, Yong-Hang

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

AU - Zhao, Yuji

PY - 2016/7/1

Y1 - 2016/7/1

N2 - The superior low-efficiency droop performance of semipolar (2021) InGaN light-emitting diodes (LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To unveil the mystery of this low droop and high efficiency, the emission dynamics of semipolar (2021) LEDs is investigated by time-resolved and steady-state photoluminescence (PL) measurements. Much smaller carrier lifetimes (radiative and nonradiative lifetime) were obtained from semipolar (2021) InGaN QWs compared with those on the -plane samples, possibly due to the reduced quantum-confined Stark effects and smaller indium fluctuation on semipolar InGaN samples. The experimental findings indicate a much reduced excess carrier density in semipolar (2021) InGaN LEDs, which will impact the device performance. Based on this, a modified ABC equation with weak phase-space-filling (PSF) effect was used to model the droop characteristics of semipolar (2021) LEDs.

AB - The superior low-efficiency droop performance of semipolar (2021) InGaN light-emitting diodes (LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To unveil the mystery of this low droop and high efficiency, the emission dynamics of semipolar (2021) LEDs is investigated by time-resolved and steady-state photoluminescence (PL) measurements. Much smaller carrier lifetimes (radiative and nonradiative lifetime) were obtained from semipolar (2021) InGaN QWs compared with those on the -plane samples, possibly due to the reduced quantum-confined Stark effects and smaller indium fluctuation on semipolar InGaN samples. The experimental findings indicate a much reduced excess carrier density in semipolar (2021) InGaN LEDs, which will impact the device performance. Based on this, a modified ABC equation with weak phase-space-filling (PSF) effect was used to model the droop characteristics of semipolar (2021) LEDs.

KW - Efficiency droop

KW - III-nitride

KW - LEDs

KW - Semipolar

UR - http://www.scopus.com/inward/record.url?scp=84976481296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84976481296&partnerID=8YFLogxK

U2 - 10.1109/JDT.2016.2521618

DO - 10.1109/JDT.2016.2521618

M3 - Article

VL - 12

SP - 736

EP - 741

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

SN - 1551-319X

IS - 7

M1 - 7390185

ER -