Study of low-efficiency droop in semipolar (2021) InGaN light-emitting diodes by time-resolved photoluminescence

Houqiang Fu, Zhijian Lu, Xin Hao Zhao, Yong-Hang Zhang, Steven P. DenBaars, Shuji Nakamura, Yuji Zhao

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

The superior low-efficiency droop performance of semipolar (2021) InGaN light-emitting diodes (LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To unveil the mystery of this low droop and high efficiency, the emission dynamics of semipolar (2021) LEDs is investigated by time-resolved and steady-state photoluminescence (PL) measurements. Much smaller carrier lifetimes (radiative and nonradiative lifetime) were obtained from semipolar (2021) InGaN QWs compared with those on the -plane samples, possibly due to the reduced quantum-confined Stark effects and smaller indium fluctuation on semipolar InGaN samples. The experimental findings indicate a much reduced excess carrier density in semipolar (2021) InGaN LEDs, which will impact the device performance. Based on this, a modified ABC equation with weak phase-space-filling (PSF) effect was used to model the droop characteristics of semipolar (2021) LEDs.

Original languageEnglish (US)
Article number7390185
Pages (from-to)736-741
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume12
Issue number7
DOIs
StatePublished - Jul 1 2016

Keywords

  • Efficiency droop
  • III-nitride
  • LEDs
  • Semipolar

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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