Abstract

InAs/InAs1-xSbx type-II superlattices (SLs) have been grown on GaSb (100) substrates using molecular beam epitaxy with different Sb/In and As/In flux ratios and growth temperatures ranging from 400 C to 450 C. The change in SL microstructure as a result of adjusting the growth conditions has been comprehensively studied. High-resolution x-ray diffraction reveals increase in Sb composition as either growth temperature or the ratio of As/Sb is decreased. Cross-sectional electron micrographs show excellent crystallinity, particularly for those samples grown close to the strain-balanced condition at lower temperatures and those with higher Sb/As flux ratios.

Original languageEnglish (US)
Pages (from-to)1-5
Number of pages5
JournalJournal of Crystal Growth
Volume381
DOIs
Publication statusPublished - 2013

    Fingerprint

Keywords

  • A1. Characterization
  • A1. Crystal structure
  • A3. Molecular beam epitaxy
  • A3. Superlattices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this