Abstract

InAs/InAs1-xSbx type-II superlattices (SLs) have been grown on GaSb (100) substrates using molecular beam epitaxy with different Sb/In and As/In flux ratios and growth temperatures ranging from 400 C to 450 C. The change in SL microstructure as a result of adjusting the growth conditions has been comprehensively studied. High-resolution x-ray diffraction reveals increase in Sb composition as either growth temperature or the ratio of As/Sb is decreased. Cross-sectional electron micrographs show excellent crystallinity, particularly for those samples grown close to the strain-balanced condition at lower temperatures and those with higher Sb/As flux ratios.

Original languageEnglish (US)
Pages (from-to)1-5
Number of pages5
JournalJournal of Crystal Growth
Volume381
DOIs
StatePublished - 2013

Fingerprint

Superlattices
Growth temperature
Electron microscopy
superlattices
electron microscopy
x ray diffraction
Diffraction
Fluxes
X rays
high resolution
Molecular beam epitaxy
temperature ratio
Microstructure
Electrons
crystallinity
Substrates
molecular beam epitaxy
adjusting
Chemical analysis
microstructure

Keywords

  • A1. Characterization
  • A1. Crystal structure
  • A3. Molecular beam epitaxy
  • A3. Superlattices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy. / Shen, Xiao Meng; Li, Hua; Liu, Shi; Smith, David; Zhang, Yong-Hang.

In: Journal of Crystal Growth, Vol. 381, 2013, p. 1-5.

Research output: Contribution to journalArticle

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abstract = "InAs/InAs1-xSbx type-II superlattices (SLs) have been grown on GaSb (100) substrates using molecular beam epitaxy with different Sb/In and As/In flux ratios and growth temperatures ranging from 400 C to 450 C. The change in SL microstructure as a result of adjusting the growth conditions has been comprehensively studied. High-resolution x-ray diffraction reveals increase in Sb composition as either growth temperature or the ratio of As/Sb is decreased. Cross-sectional electron micrographs show excellent crystallinity, particularly for those samples grown close to the strain-balanced condition at lower temperatures and those with higher Sb/As flux ratios.",
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AU - Liu, Shi

AU - Smith, David

AU - Zhang, Yong-Hang

PY - 2013

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AB - InAs/InAs1-xSbx type-II superlattices (SLs) have been grown on GaSb (100) substrates using molecular beam epitaxy with different Sb/In and As/In flux ratios and growth temperatures ranging from 400 C to 450 C. The change in SL microstructure as a result of adjusting the growth conditions has been comprehensively studied. High-resolution x-ray diffraction reveals increase in Sb composition as either growth temperature or the ratio of As/Sb is decreased. Cross-sectional electron micrographs show excellent crystallinity, particularly for those samples grown close to the strain-balanced condition at lower temperatures and those with higher Sb/As flux ratios.

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