Abstract
InAs/InAs1-xSbx type-II superlattices (SLs) have been grown on GaSb (100) substrates using molecular beam epitaxy with different Sb/In and As/In flux ratios and growth temperatures ranging from 400 C to 450 C. The change in SL microstructure as a result of adjusting the growth conditions has been comprehensively studied. High-resolution x-ray diffraction reveals increase in Sb composition as either growth temperature or the ratio of As/Sb is decreased. Cross-sectional electron micrographs show excellent crystallinity, particularly for those samples grown close to the strain-balanced condition at lower temperatures and those with higher Sb/As flux ratios.
Original language | English (US) |
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Pages (from-to) | 1-5 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 381 |
DOIs | |
State | Published - 2013 |
Keywords
- A1. Characterization
- A1. Crystal structure
- A3. Molecular beam epitaxy
- A3. Superlattices
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry