TY - JOUR
T1 - Study of electrochemical and photoelectrochemical properties of nickel phosphide semiconductors
AU - Sharon, Maheshwar
AU - Tamizhmani, G.
AU - Levy-Clement, Claude
AU - Rioux, Jacques
N1 - Funding Information:
We thank Professor O. P. Agnihotri, Indian Institute of Technology, Delhi, and Dr. B. M. Arora, the Tata Institute of Fundamental Research, Bombay, for extending their facilities to carry out reflectance and Hall studies respectively. We are also thankful to the Department of Atomic Energy for the support of a fellowship to one of us (G.T.).
PY - 1989/9
Y1 - 1989/9
N2 - For the first time a detailed photoelectrochemical study of n-type nickel phosphide (Ni2P) material (thin film as well as powder) is reported. This material has a hexagonal structure with a band gap of 1.0 eV. The band edge positions are calculated using electron spectroscopy for chemical analysis. The compound is found to be stable in alkaline and acidic media. The photoconversion efficiency found to be 0.26%.
AB - For the first time a detailed photoelectrochemical study of n-type nickel phosphide (Ni2P) material (thin film as well as powder) is reported. This material has a hexagonal structure with a band gap of 1.0 eV. The band edge positions are calculated using electron spectroscopy for chemical analysis. The compound is found to be stable in alkaline and acidic media. The photoconversion efficiency found to be 0.26%.
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U2 - 10.1016/0379-6787(89)90089-6
DO - 10.1016/0379-6787(89)90089-6
M3 - Article
AN - SCOPUS:0024737377
VL - 26
SP - 303
EP - 312
JO - Solar Cells
JF - Solar Cells
SN - 0927-0248
IS - 4
ER -