Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

G. V. Luong, S. Wirths, S. Stefanov, B. Holländer, J. Schubert, J. C. Conde, T. Stoica, U. Breuer, S. Chiussi, Michael Goryll, D. Buca, S. Mantl

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Abstract

Excimer Laser Annealing (ELA) with a wavelength of 248 nm is used to study doping of biaxialy compressively strained Si1-xGex/Si heterostructures. The challenge is to achieve a high activation of As in SiGe, while conserving the elastic strain and suppressing dopant diffusion. Doping of 20 nm Si0.64Ge0.36 layers by ion implantation of 1 × 1015 As+/cm2 and subsequent laser annealing using single 20 ns pulse with an energy density of 0.6 J/cm2 leads to an As activation of about 20% and a sheet resistance of 650 Ω/sq. At this laser energy density, the entire SiGe layer melts and the subsequent fast recrystallization on a nanosecond time scale allows high As incorporation into the lattice. Moreover, using these annealing parameters, the SiGe layer exhibits epitaxial regrowth with negligible strain relaxation. ELA at energy densities greater than 0.6 J/cm2 resembles Pulsed Lased Induced Epitaxy, leading to an intermixing of the SiGe layer with the Si substrate, thus to thicker single-crystalline strained SiGe layers with sheet resistance down to 62 Ω/sq. Effects of energy densities on composition, crystal quality, activation of As and co-doping with B are discussed and related to the spatial and temporal evolution of the temperature in the irradiated zone, as simulated by Finite Element Methods.

Original languageEnglish (US)
Article number204902
JournalJournal of Applied Physics
Volume113
Issue number20
DOIs
StatePublished - 2013

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laser annealing
excimer lasers
activation
flux density
epitaxy
ion implantation
finite element method
annealing
pulses
wavelengths
crystals
lasers
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Luong, G. V., Wirths, S., Stefanov, S., Holländer, B., Schubert, J., Conde, J. C., ... Mantl, S. (2013). Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing. Journal of Applied Physics, 113(20), [204902]. https://doi.org/10.1063/1.4807001

Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing. / Luong, G. V.; Wirths, S.; Stefanov, S.; Holländer, B.; Schubert, J.; Conde, J. C.; Stoica, T.; Breuer, U.; Chiussi, S.; Goryll, Michael; Buca, D.; Mantl, S.

In: Journal of Applied Physics, Vol. 113, No. 20, 204902, 2013.

Research output: Contribution to journalArticle

Luong, GV, Wirths, S, Stefanov, S, Holländer, B, Schubert, J, Conde, JC, Stoica, T, Breuer, U, Chiussi, S, Goryll, M, Buca, D & Mantl, S 2013, 'Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing', Journal of Applied Physics, vol. 113, no. 20, 204902. https://doi.org/10.1063/1.4807001
Luong, G. V. ; Wirths, S. ; Stefanov, S. ; Holländer, B. ; Schubert, J. ; Conde, J. C. ; Stoica, T. ; Breuer, U. ; Chiussi, S. ; Goryll, Michael ; Buca, D. ; Mantl, S. / Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing. In: Journal of Applied Physics. 2013 ; Vol. 113, No. 20.
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