Abstract
Confocal photoluminescence is shown to be a powerful tool for analyzing defect structure in epitaxial CdTe appropriate for photovoltaic applications. Non-radiative defects such as dislocations are easily mapped and quantified. Photoluminescence intensity measurements are shown to be a valuable tool for quantifying interface state density. Very low dislocation density and twin content can be achieved for epitaxial CdTe, and low interface state densities result from using CdMgTe barriers.
| Original language | English (US) |
|---|---|
| Title of host publication | 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2419-2424 |
| Number of pages | 6 |
| ISBN (Print) | 9781479943982 |
| DOIs | |
| State | Published - Oct 15 2014 |
| Event | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014 |
Other
| Other | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 |
|---|---|
| Country | United States |
| City | Denver |
| Period | 6/8/14 → 6/13/14 |
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Keywords
- CdTe
- molecular beam epitaxy
- photoluminescence
- Surface passivation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Study of defects in CdTe heterostructures using imaging confocal photoluminescence and photoluminescence intensity measurements. / Swartz, Craig H.; Noriega, Odille C.; Jayathilaka, Pathiraja A R D; Edirisooriya, Madhavie; Zhao, Xin Hao; Dinezza, Michael J.; Liu, Shi; Zhang, Yong-Hang; Myers, Thomas H.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2419-2424 6925416.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Study of defects in CdTe heterostructures using imaging confocal photoluminescence and photoluminescence intensity measurements
AU - Swartz, Craig H.
AU - Noriega, Odille C.
AU - Jayathilaka, Pathiraja A R D
AU - Edirisooriya, Madhavie
AU - Zhao, Xin Hao
AU - Dinezza, Michael J.
AU - Liu, Shi
AU - Zhang, Yong-Hang
AU - Myers, Thomas H.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - Confocal photoluminescence is shown to be a powerful tool for analyzing defect structure in epitaxial CdTe appropriate for photovoltaic applications. Non-radiative defects such as dislocations are easily mapped and quantified. Photoluminescence intensity measurements are shown to be a valuable tool for quantifying interface state density. Very low dislocation density and twin content can be achieved for epitaxial CdTe, and low interface state densities result from using CdMgTe barriers.
AB - Confocal photoluminescence is shown to be a powerful tool for analyzing defect structure in epitaxial CdTe appropriate for photovoltaic applications. Non-radiative defects such as dislocations are easily mapped and quantified. Photoluminescence intensity measurements are shown to be a valuable tool for quantifying interface state density. Very low dislocation density and twin content can be achieved for epitaxial CdTe, and low interface state densities result from using CdMgTe barriers.
KW - CdTe
KW - molecular beam epitaxy
KW - photoluminescence
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=84912101564&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912101564&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925416
DO - 10.1109/PVSC.2014.6925416
M3 - Conference contribution
AN - SCOPUS:84912101564
SN - 9781479943982
SP - 2419
EP - 2424
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -