Study of defects in CdTe heterostructures using imaging confocal photoluminescence and photoluminescence intensity measurements

Craig H. Swartz, Odille C. Noriega, Pathiraja A R D Jayathilaka, Madhavie Edirisooriya, Xin Hao Zhao, Michael J. Dinezza, Shi Liu, Yong-Hang Zhang, Thomas H. Myers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Confocal photoluminescence is shown to be a powerful tool for analyzing defect structure in epitaxial CdTe appropriate for photovoltaic applications. Non-radiative defects such as dislocations are easily mapped and quantified. Photoluminescence intensity measurements are shown to be a valuable tool for quantifying interface state density. Very low dislocation density and twin content can be achieved for epitaxial CdTe, and low interface state densities result from using CdMgTe barriers.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2419-2424
Number of pages6
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Interface states
Heterojunctions
Photoluminescence
Imaging techniques
Defects
Defect structures
Dislocations (crystals)

Keywords

  • CdTe
  • molecular beam epitaxy
  • photoluminescence
  • Surface passivation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Swartz, C. H., Noriega, O. C., Jayathilaka, P. A. R. D., Edirisooriya, M., Zhao, X. H., Dinezza, M. J., ... Myers, T. H. (2014). Study of defects in CdTe heterostructures using imaging confocal photoluminescence and photoluminescence intensity measurements. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2419-2424). [6925416] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925416

Study of defects in CdTe heterostructures using imaging confocal photoluminescence and photoluminescence intensity measurements. / Swartz, Craig H.; Noriega, Odille C.; Jayathilaka, Pathiraja A R D; Edirisooriya, Madhavie; Zhao, Xin Hao; Dinezza, Michael J.; Liu, Shi; Zhang, Yong-Hang; Myers, Thomas H.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2419-2424 6925416.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Swartz, CH, Noriega, OC, Jayathilaka, PARD, Edirisooriya, M, Zhao, XH, Dinezza, MJ, Liu, S, Zhang, Y-H & Myers, TH 2014, Study of defects in CdTe heterostructures using imaging confocal photoluminescence and photoluminescence intensity measurements. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925416, Institute of Electrical and Electronics Engineers Inc., pp. 2419-2424, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925416
Swartz CH, Noriega OC, Jayathilaka PARD, Edirisooriya M, Zhao XH, Dinezza MJ et al. Study of defects in CdTe heterostructures using imaging confocal photoluminescence and photoluminescence intensity measurements. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2419-2424. 6925416 https://doi.org/10.1109/PVSC.2014.6925416
Swartz, Craig H. ; Noriega, Odille C. ; Jayathilaka, Pathiraja A R D ; Edirisooriya, Madhavie ; Zhao, Xin Hao ; Dinezza, Michael J. ; Liu, Shi ; Zhang, Yong-Hang ; Myers, Thomas H. / Study of defects in CdTe heterostructures using imaging confocal photoluminescence and photoluminescence intensity measurements. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2419-2424
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