Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs

T. Khan; Dragica Vasileska; Trevor Thornton

Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs

T. Khan, Dragica Vasileska, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have developed a transport model, based on the solution of the Boltzmann Transport Equation, for modeling n-channel silicon-on-insulator MESFETs. All relevant scattering mechanisms for the silicon material system are included in the transport portion of the device simulator. From our simulations we have found that the mobility of the equivalent SOI MESFET device is three to five times higher than that of the SOI MOSFET in the sub-threshold regime. So, the cutoff frequency of the SOI MESFET will be higher than its conventional counter part.

Original language	English (US)
Title of host publication	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
Editors	M. Laudon, B. Romanowicz
Pages	150-152
Number of pages	3
State	Published - 2005
Event	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States Duration: May 8 2005 → May 12 2005

Publication series

Name	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Other

Other	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
Country/Territory	United States
City	Anaheim, CA
Period	5/8/05 → 5/12/05

Keywords

Low-field mobility
Low-power r.f. applications
Surface-roughness scattering

ASJC Scopus subject areas

General Engineering

Cite this

Khan, T., Vasileska, D., & Thornton, T. (2005). Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs. In M. Laudon, & B. Romanowicz (Eds.), 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings (pp. 150-152). (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs. / Khan, T.; Vasileska, Dragica ; Thornton, Trevor.
2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. ed. / M. Laudon; B. Romanowicz. 2005. p. 150-152 (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Khan, T, Vasileska, D & Thornton, T 2005, Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs. in M Laudon & B Romanowicz (eds), 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings, pp. 150-152, 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005, Anaheim, CA, United States, 5/8/05.

Khan T, Vasileska D , Thornton T. Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs. In Laudon M, Romanowicz B, editors, 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. 2005. p. 150-152. (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Khan, T. ; Vasileska, Dragica ; Thornton, Trevor. / Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs. 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. editor / M. Laudon ; B. Romanowicz. 2005. pp. 150-152 (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

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abstract = "We have developed a transport model, based on the solution of the Boltzmann Transport Equation, for modeling n-channel silicon-on-insulator MESFETs. All relevant scattering mechanisms for the silicon material system are included in the transport portion of the device simulator. From our simulations we have found that the mobility of the equivalent SOI MESFET device is three to five times higher than that of the SOI MOSFET in the sub-threshold regime. So, the cutoff frequency of the SOI MESFET will be higher than its conventional counter part.",

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Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs

Abstract

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