Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We have developed a transport model, based on the solution of the Boltzmann Transport Equation, for modeling n-channel silicon-on-insulator MESFETs. All relevant scattering mechanisms for the silicon material system are included in the transport portion of the device simulator. From our simulations we have found that the mobility of the equivalent SOI MESFET device is three to five times higher than that of the SOI MOSFET in the sub-threshold regime. So, the cutoff frequency of the SOI MESFET will be higher than its conventional counter part.

Original languageEnglish (US)
Title of host publication2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
EditorsM. Laudon, B. Romanowicz
Pages150-152
Number of pages3
StatePublished - Dec 1 2005
Event2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States
Duration: May 8 2005May 12 2005

Publication series

Name2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Other

Other2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
CountryUnited States
CityAnaheim, CA
Period5/8/055/12/05

Keywords

  • Low-field mobility
  • Low-power r.f. applications
  • Surface-roughness scattering

ASJC Scopus subject areas

  • Engineering(all)

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    Khan, T., Vasileska, D., & Thornton, T. (2005). Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs. In M. Laudon, & B. Romanowicz (Eds.), 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings (pp. 150-152). (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).