Abstract
Strong internal electric fields (of the order of MV/cm) influence the electronic properties and light emission process of InGaN quantum wells. We have used electron holography to directly profile the potential and charge distribution across a GaN/In 0.18Ga 0.82N/GaN quantum well structure, and present here an analysis of the fine-scale potential variations at the quantum well. The potential profiles show a drop of 0.6±0.2V across, and an internal electric field of -2.2±0.6MV/cm in the quantum well. An analysis based on Poisson's equation suggests that the field is caused by electronic charges with a peak density of 8×10 20cm -3, corresponding to a sheet charge density of 0.027C/m 2. Free electron and hole densities of the order of 10 20cm -3 are confined separately in the quantum well. These free carriers screen only part of the electric field due to the polarization effect.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 9856-9862 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 91 |
| Issue number | 12 |
| DOIs | |
| State | Published - Jun 15 2002 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Study of charge distribution across interfaces in GaN/InGaN/GaN single quantum wells using electron holography. / Cai, Juan; Ponce, Fernando.
In: Journal of Applied Physics, Vol. 91, No. 12, 15.06.2002, p. 9856-9862.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Study of charge distribution across interfaces in GaN/InGaN/GaN single quantum wells using electron holography
AU - Cai, Juan
AU - Ponce, Fernando
PY - 2002/6/15
Y1 - 2002/6/15
N2 - Strong internal electric fields (of the order of MV/cm) influence the electronic properties and light emission process of InGaN quantum wells. We have used electron holography to directly profile the potential and charge distribution across a GaN/In 0.18Ga 0.82N/GaN quantum well structure, and present here an analysis of the fine-scale potential variations at the quantum well. The potential profiles show a drop of 0.6±0.2V across, and an internal electric field of -2.2±0.6MV/cm in the quantum well. An analysis based on Poisson's equation suggests that the field is caused by electronic charges with a peak density of 8×10 20cm -3, corresponding to a sheet charge density of 0.027C/m 2. Free electron and hole densities of the order of 10 20cm -3 are confined separately in the quantum well. These free carriers screen only part of the electric field due to the polarization effect.
AB - Strong internal electric fields (of the order of MV/cm) influence the electronic properties and light emission process of InGaN quantum wells. We have used electron holography to directly profile the potential and charge distribution across a GaN/In 0.18Ga 0.82N/GaN quantum well structure, and present here an analysis of the fine-scale potential variations at the quantum well. The potential profiles show a drop of 0.6±0.2V across, and an internal electric field of -2.2±0.6MV/cm in the quantum well. An analysis based on Poisson's equation suggests that the field is caused by electronic charges with a peak density of 8×10 20cm -3, corresponding to a sheet charge density of 0.027C/m 2. Free electron and hole densities of the order of 10 20cm -3 are confined separately in the quantum well. These free carriers screen only part of the electric field due to the polarization effect.
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U2 - 10.1063/1.1477602
DO - 10.1063/1.1477602
M3 - Article
VL - 91
SP - 9856
EP - 9862
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 12
ER -