Study of charge distribution across interfaces in GaN/InGaN/GaN single quantum wells using electron holography

Juan Cai, Fernando Ponce

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Strong internal electric fields (of the order of MV/cm) influence the electronic properties and light emission process of InGaN quantum wells. We have used electron holography to directly profile the potential and charge distribution across a GaN/In 0.18Ga 0.82N/GaN quantum well structure, and present here an analysis of the fine-scale potential variations at the quantum well. The potential profiles show a drop of 0.6±0.2V across, and an internal electric field of -2.2±0.6MV/cm in the quantum well. An analysis based on Poisson's equation suggests that the field is caused by electronic charges with a peak density of 8×10 20cm -3, corresponding to a sheet charge density of 0.027C/m 2. Free electron and hole densities of the order of 10 20cm -3 are confined separately in the quantum well. These free carriers screen only part of the electric field due to the polarization effect.

Original languageEnglish (US)
Pages (from-to)9856-9862
Number of pages7
JournalJournal of Applied Physics
Volume91
Issue number12
DOIs
StatePublished - Jun 15 2002

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holography
charge distribution
quantum wells
electrons
electric fields
profiles
Poisson equation
electronics
free electrons
light emission
polarization

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Study of charge distribution across interfaces in GaN/InGaN/GaN single quantum wells using electron holography. / Cai, Juan; Ponce, Fernando.

In: Journal of Applied Physics, Vol. 91, No. 12, 15.06.2002, p. 9856-9862.

Research output: Contribution to journalArticle

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