Study of carrier lifetime degradation in (Zn)CdTe/MgCdTe double heterostructures

Xin Hao Zhao; Shi Liu; Calli M. Campbell; Yong-Hang Zhang

doi:10.1109/PVSC.2015.7355885

Study of carrier lifetime degradation in (Zn)CdTe/MgCdTe double heterostructures

Xin Hao Zhao, Shi Liu, Calli M. Campbell, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

(Zn)CdTe/MgCdTe double heterostructures (DH) are grown on InSb substrates using MBE. The DHs are capped with 10∼30 nm (Zn)CdTe layers to prevent MgCdTe from oxidization. The carrier lifetimes of the DHs with Mg0.24Cd0.76Te barrier layer degrade fast within the first week in atmosphere and then at a much slower rate. The carrier lifetime degradation is about 20-30% compared with the initial value. However, for the DHs with Mg0.36Cd0.64Te barrier layer, the carrier lifetime is stable over time. The degradation of the lifetime for samples with Mg0.24Cd0.76Te barrier is attributed to the degradation at the surface of (Zn)CdTe cap, since photogenerated carries can more easily overcome the lower Mg0.24Cd0.76Te barrier layer through thermionic emission and recombine non-radiatively at the top surface. The Mg0.36Cd0.64Te barrier with a much higher potential height will prevent those carriers from escaping the CdTe region, thus resulting in a much longer carrier lifetime and less impact from surface conditions.

Original language	English (US)
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355885
State	Published - Dec 14 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	6/14/15 → 6/19/15

Keywords

carrier lifetime
CdTe
MBE
MgCdTe
solar cells

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7355885

Cite this

Zhao, XH, Liu, S, Campbell, CM & Zhang, Y-H 2015, Study of carrier lifetime degradation in (Zn)CdTe/MgCdTe double heterostructures. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355885, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355885

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title = "Study of carrier lifetime degradation in (Zn)CdTe/MgCdTe double heterostructures",

abstract = "(Zn)CdTe/MgCdTe double heterostructures (DH) are grown on InSb substrates using MBE. The DHs are capped with 10∼30 nm (Zn)CdTe layers to prevent MgCdTe from oxidization. The carrier lifetimes of the DHs with Mg0.24Cd0.76Te barrier layer degrade fast within the first week in atmosphere and then at a much slower rate. The carrier lifetime degradation is about 20-30% compared with the initial value. However, for the DHs with Mg0.36Cd0.64Te barrier layer, the carrier lifetime is stable over time. The degradation of the lifetime for samples with Mg0.24Cd0.76Te barrier is attributed to the degradation at the surface of (Zn)CdTe cap, since photogenerated carries can more easily overcome the lower Mg0.24Cd0.76Te barrier layer through thermionic emission and recombine non-radiatively at the top surface. The Mg0.36Cd0.64Te barrier with a much higher potential height will prevent those carriers from escaping the CdTe region, thus resulting in a much longer carrier lifetime and less impact from surface conditions.",

keywords = "carrier lifetime, CdTe, MBE, MgCdTe, solar cells",

author = "Zhao, {Xin Hao} and Shi Liu and Campbell, {Calli M.} and Yong-Hang Zhang",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7355885",

language = "English (US)",

isbn = "9781479979448",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

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TY - GEN

T1 - Study of carrier lifetime degradation in (Zn)CdTe/MgCdTe double heterostructures

AU - Zhao, Xin Hao

AU - Liu, Shi

AU - Campbell, Calli M.

AU - Zhang, Yong-Hang

PY - 2015/12/14

Y1 - 2015/12/14

N2 - (Zn)CdTe/MgCdTe double heterostructures (DH) are grown on InSb substrates using MBE. The DHs are capped with 10∼30 nm (Zn)CdTe layers to prevent MgCdTe from oxidization. The carrier lifetimes of the DHs with Mg0.24Cd0.76Te barrier layer degrade fast within the first week in atmosphere and then at a much slower rate. The carrier lifetime degradation is about 20-30% compared with the initial value. However, for the DHs with Mg0.36Cd0.64Te barrier layer, the carrier lifetime is stable over time. The degradation of the lifetime for samples with Mg0.24Cd0.76Te barrier is attributed to the degradation at the surface of (Zn)CdTe cap, since photogenerated carries can more easily overcome the lower Mg0.24Cd0.76Te barrier layer through thermionic emission and recombine non-radiatively at the top surface. The Mg0.36Cd0.64Te barrier with a much higher potential height will prevent those carriers from escaping the CdTe region, thus resulting in a much longer carrier lifetime and less impact from surface conditions.

AB - (Zn)CdTe/MgCdTe double heterostructures (DH) are grown on InSb substrates using MBE. The DHs are capped with 10∼30 nm (Zn)CdTe layers to prevent MgCdTe from oxidization. The carrier lifetimes of the DHs with Mg0.24Cd0.76Te barrier layer degrade fast within the first week in atmosphere and then at a much slower rate. The carrier lifetime degradation is about 20-30% compared with the initial value. However, for the DHs with Mg0.36Cd0.64Te barrier layer, the carrier lifetime is stable over time. The degradation of the lifetime for samples with Mg0.24Cd0.76Te barrier is attributed to the degradation at the surface of (Zn)CdTe cap, since photogenerated carries can more easily overcome the lower Mg0.24Cd0.76Te barrier layer through thermionic emission and recombine non-radiatively at the top surface. The Mg0.36Cd0.64Te barrier with a much higher potential height will prevent those carriers from escaping the CdTe region, thus resulting in a much longer carrier lifetime and less impact from surface conditions.

KW - carrier lifetime

KW - CdTe

KW - MBE

KW - MgCdTe

KW - solar cells

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AN - SCOPUS:84961635259

SN - 9781479979448

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Study of carrier lifetime degradation in (Zn)CdTe/MgCdTe double heterostructures

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