Study of a novel ITO/AZO/SiO2/p-Si SIS heterojunction

Bo He, Quan Ma Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, Nan Sheng Zhang, Zheng Shan Yu, Yan Ting Yin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect.

Original languageEnglish (US)
Title of host publication2009 Symposium on Photonics and Optoelectronics, SOPO 2009
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 Symposium on Photonics and Optoelectronics, SOPO 2009 - Wuhan, China
Duration: Aug 14 2009Aug 16 2009

Publication series

Name2009 Symposium on Photonics and Optoelectronics, SOPO 2009

Conference

Conference2009 Symposium on Photonics and Optoelectronics, SOPO 2009
Country/TerritoryChina
CityWuhan
Period8/14/098/16/09

Keywords

  • Al-doped ZnO (AZO)
  • Current-voltage(I-V) characteristics
  • ITO
  • SIS heterojunction
  • Sputtering

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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