Abstract

A 50-nm nMOSFET has been studied by Ensemble Monte Carlo (EMC) simulation including a novel physical model for the treatment of surface roughness and impurity scattering in the Si inversion layer. In this model, we use a bulk-like phonon and impurity scattering model and surface-roughness scattering in the silicon inversion layer, coupled with the effective/smoothed potential approach to account for space quantization effects. This approach does not require a self-consistent solution of Schrödinger equation. A thorough account of how these scattering mechanisms affect the transport transient response and steady-state regime in a 50-nm gate-length nMOSFET is given in this paper. A set of Ids-Vds curves for the transistor is shown. We find that the smoothing of the potential to account for quantum effects has a strong impact on the electron transport properties, both in transient and steady-state regimes. We also show results for the impact that impurity and surface-roughness scattering mechanisms have on the average velocity of the carriers in the channel and the current flowing through the device. It was found that time-scales as short as 0.1-0.2 ps are enough to reach a steady-state channel electron average velocity.

Original languageEnglish (US)
Pages (from-to)125-132
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume49
Issue number1
DOIs
StatePublished - Jan 2002

Fingerprint

Inversion layers
surface roughness
Surface roughness
Scattering
Impurities
inversions
impurities
scattering
simulation
Electron transport properties
transient response
Silicon
smoothing
Transient analysis
Transistors
electrons
transistors
transport properties
Monte Carlo simulation
Electrons

Keywords

  • Monte Carlo (MC)
  • MOSFET
  • Simulation
  • Smoothed potential
  • Transient

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Study of a 50-nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer",
abstract = "A 50-nm nMOSFET has been studied by Ensemble Monte Carlo (EMC) simulation including a novel physical model for the treatment of surface roughness and impurity scattering in the Si inversion layer. In this model, we use a bulk-like phonon and impurity scattering model and surface-roughness scattering in the silicon inversion layer, coupled with the effective/smoothed potential approach to account for space quantization effects. This approach does not require a self-consistent solution of Schr{\"o}dinger equation. A thorough account of how these scattering mechanisms affect the transport transient response and steady-state regime in a 50-nm gate-length nMOSFET is given in this paper. A set of Ids-Vds curves for the transistor is shown. We find that the smoothing of the potential to account for quantum effects has a strong impact on the electron transport properties, both in transient and steady-state regimes. We also show results for the impact that impurity and surface-roughness scattering mechanisms have on the average velocity of the carriers in the channel and the current flowing through the device. It was found that time-scales as short as 0.1-0.2 ps are enough to reach a steady-state channel electron average velocity.",
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author = "Formicone, {Gabriele F.} and Marco Saraniti and Dragica Vasileska and Ferry, {David K.}",
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N2 - A 50-nm nMOSFET has been studied by Ensemble Monte Carlo (EMC) simulation including a novel physical model for the treatment of surface roughness and impurity scattering in the Si inversion layer. In this model, we use a bulk-like phonon and impurity scattering model and surface-roughness scattering in the silicon inversion layer, coupled with the effective/smoothed potential approach to account for space quantization effects. This approach does not require a self-consistent solution of Schrödinger equation. A thorough account of how these scattering mechanisms affect the transport transient response and steady-state regime in a 50-nm gate-length nMOSFET is given in this paper. A set of Ids-Vds curves for the transistor is shown. We find that the smoothing of the potential to account for quantum effects has a strong impact on the electron transport properties, both in transient and steady-state regimes. We also show results for the impact that impurity and surface-roughness scattering mechanisms have on the average velocity of the carriers in the channel and the current flowing through the device. It was found that time-scales as short as 0.1-0.2 ps are enough to reach a steady-state channel electron average velocity.

AB - A 50-nm nMOSFET has been studied by Ensemble Monte Carlo (EMC) simulation including a novel physical model for the treatment of surface roughness and impurity scattering in the Si inversion layer. In this model, we use a bulk-like phonon and impurity scattering model and surface-roughness scattering in the silicon inversion layer, coupled with the effective/smoothed potential approach to account for space quantization effects. This approach does not require a self-consistent solution of Schrödinger equation. A thorough account of how these scattering mechanisms affect the transport transient response and steady-state regime in a 50-nm gate-length nMOSFET is given in this paper. A set of Ids-Vds curves for the transistor is shown. We find that the smoothing of the potential to account for quantum effects has a strong impact on the electron transport properties, both in transient and steady-state regimes. We also show results for the impact that impurity and surface-roughness scattering mechanisms have on the average velocity of the carriers in the channel and the current flowing through the device. It was found that time-scales as short as 0.1-0.2 ps are enough to reach a steady-state channel electron average velocity.

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