Abstract

A 50-nm nMOSFET has been studied by Ensemble Monte Carlo (EMC) simulation including a novel physical model for the treatment of surface roughness and impurity scattering in the Si inversion layer. In this model, we use a bulk-like phonon and impurity scattering model and surface-roughness scattering in the silicon inversion layer, coupled with the effective/smoothed potential approach to account for space quantization effects. This approach does not require a self-consistent solution of Schrödinger equation. A thorough account of how these scattering mechanisms affect the transport transient response and steady-state regime in a 50-nm gate-length nMOSFET is given in this paper. A set of Ids-Vds curves for the transistor is shown. We find that the smoothing of the potential to account for quantum effects has a strong impact on the electron transport properties, both in transient and steady-state regimes. We also show results for the impact that impurity and surface-roughness scattering mechanisms have on the average velocity of the carriers in the channel and the current flowing through the device. It was found that time-scales as short as 0.1-0.2 ps are enough to reach a steady-state channel electron average velocity.

Original languageEnglish (US)
Pages (from-to)125-132
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume49
Issue number1
DOIs
StatePublished - Jan 1 2002

Keywords

  • MOSFET
  • Monte Carlo (MC)
  • Simulation
  • Smoothed potential
  • Transient

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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