Abstract
A 50-nm nMOSFET has been studied by Ensemble Monte Carlo (EMC) simulation including a novel physical model for the treatment of surface roughness and impurity scattering in the Si inversion layer. In this model, we use a bulk-like phonon and impurity scattering model and surface-roughness scattering in the silicon inversion layer, coupled with the effective/smoothed potential approach to account for space quantization effects. This approach does not require a self-consistent solution of Schrödinger equation. A thorough account of how these scattering mechanisms affect the transport transient response and steady-state regime in a 50-nm gate-length nMOSFET is given in this paper. A set of Ids-Vds curves for the transistor is shown. We find that the smoothing of the potential to account for quantum effects has a strong impact on the electron transport properties, both in transient and steady-state regimes. We also show results for the impact that impurity and surface-roughness scattering mechanisms have on the average velocity of the carriers in the channel and the current flowing through the device. It was found that time-scales as short as 0.1-0.2 ps are enough to reach a steady-state channel electron average velocity.
Original language | English (US) |
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Pages (from-to) | 125-132 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 49 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2002 |
Keywords
- MOSFET
- Monte Carlo (MC)
- Simulation
- Smoothed potential
- Transient
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering