Study and modeling of the impact of TID on the ATREE response in LM124 operational amplifier

Fabien Roig, L. Dusseau, P. Ribeiro, G. Auriel, N. J.H. Roche, A. Privat, J. R. Vaillé, J. Boch, F. Saigné, R. Marec, P. Calvel, F. Bezerra, R. Ecoffet, B. Azais

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Shapes of ATREEs (Analog Transient Radiation Effects on Electronics) in a bipolar integrated circuit change with exposure to Total Ionizing Dose (TID) radiation. The impact of TID on ATREEs is investigated in the LM124 operational amplifier (opamp) from three different manufacturers. Significant variations are observed on the ATREE responsesfrom different manufacturers. The ATREEs are produced by pulsed X-ray experiments. ASET laser mappings are performed to highlight the sensitive bipolar transistors, explaining the ATREE phenomena variations from one manufacturer to another one. ATREE modeling results are presented using a previously developed simulation tool. A good agreement is observed between experimental ATREE responses and model outputs whatever the TID level, the prompt dose level, the amplifier configuration and the device manufacturer.

Original languageEnglish (US)
Article number6819474
Pages (from-to)1603-1610
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number4
DOIs
StatePublished - Aug 2014
Externally publishedYes

Keywords

  • Bipolar analog integrated circuits
  • circuit modeling
  • ionizing dose
  • single event transient
  • transient radiation effects
  • transient response
  • X-ray effects

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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