Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)x(TiOx)1-x and other complex oxides

C. C. Fulton, G. Lucovsky, Y. Zhang, Y. Zou, R. J. Nemanich, H. Ade, J. L. Whitten

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

X-ray absorption spectroscopy and vacuum ultra-violet spectroscopic ellipsometry are used to study the electronic structure of complex oxides comprised of mixed TM/TM and TM/RE oxides. Experimental spectra for HfTiO 4 and Gd(Dy)ScO3 indicate multiple d-state features in the O K1 edge. These are compared with the empirical models for atomic d-state mixing. It is concluded that a mean field, virtual alloy model does not apply, and that the effects associated with the differences in atomic coordination and deviations from ideal octahedral or cubic bonding play a determinant role in d-state atom mixing. The results are applied band edge engineering options for high-k dielectric applications.

Original languageEnglish (US)
Pages (from-to)913-916
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume144-147
DOIs
StatePublished - Jun 1 2005
Externally publishedYes

Keywords

  • Band gap engineering
  • Complex oxides
  • Spectroscopic ellipsometry
  • X-ray absorption spectra
  • d-State coupling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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