Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy

W. Liang; Kong-Thon Tsen; D. K. Ferry; Hai Lu; William J. Schaff

doi:10.1117/12.592971

Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy

W. Liang, Kong-Thon Tsen, D. K. Ferry, Hai Lu, William J. Schaff

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Non-equilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the bandgap of InN cannot be around 1.89 eV; but are consistent with a bandgap of around 0.8 eV. In addition, they disprove the idea that 0.8 eV-luminescence observed recently in InN is due to deep level radiative emission in InN.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	K.-T. Tsen, J.-J. Song, H. Jiang
Pages	371-378
Number of pages	8
Volume	5725
DOIs	https://doi.org/10.1117/12.592971
State	Published - 2005
Event	Ultrafast Phenomena in Semiconductors and Nanostructure - San Jose, CA, United States Duration: Jan 24 2005 → Jan 27 2005

Other

Other	Ultrafast Phenomena in Semiconductors and Nanostructure
Country/Territory	United States
City	San Jose, CA
Period	1/24/05 → 1/27/05

Keywords

Bandgap
InN
Optical phonons

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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10.1117/12.592971

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Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy. / Liang, W.; Tsen, Kong-Thon; Ferry, D. K. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.-T. Tsen; J.-J. Song; H. Jiang. Vol. 5725 2005. p. 371-378 55.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liang, W, Tsen, K-T, Ferry, DK, Lu, H & Schaff, WJ 2005, Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy. in K-T Tsen, J-J Song & H Jiang (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5725, 55, pp. 371-378, Ultrafast Phenomena in Semiconductors and Nanostructure, San Jose, CA, United States, 1/24/05. https://doi.org/10.1117/12.592971

@inproceedings{dd3c49791ba74c739fdfaaf6709a2cd6,

title = "Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy",

abstract = "Non-equilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the bandgap of InN cannot be around 1.89 eV; but are consistent with a bandgap of around 0.8 eV. In addition, they disprove the idea that 0.8 eV-luminescence observed recently in InN is due to deep level radiative emission in InN.",

keywords = "Bandgap, InN, Optical phonons",

author = "W. Liang and Kong-Thon Tsen and Ferry, {D. K.} and Hai Lu and Schaff, {William J.}",

year = "2005",

doi = "10.1117/12.592971",

language = "English (US)",

volume = "5725",

pages = "371--378",

editor = "K.-T. Tsen and J.-J. Song and H. Jiang",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Ultrafast Phenomena in Semiconductors and Nanostructure ; Conference date: 24-01-2005 Through 27-01-2005",

}

TY - GEN

T1 - Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy

AU - Liang, W.

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Lu, Hai

AU - Schaff, William J.

PY - 2005

Y1 - 2005

N2 - Non-equilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the bandgap of InN cannot be around 1.89 eV; but are consistent with a bandgap of around 0.8 eV. In addition, they disprove the idea that 0.8 eV-luminescence observed recently in InN is due to deep level radiative emission in InN.

AB - Non-equilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the bandgap of InN cannot be around 1.89 eV; but are consistent with a bandgap of around 0.8 eV. In addition, they disprove the idea that 0.8 eV-luminescence observed recently in InN is due to deep level radiative emission in InN.

KW - Bandgap

KW - InN

KW - Optical phonons

UR - http://www.scopus.com/inward/record.url?scp=21844453194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21844453194&partnerID=8YFLogxK

U2 - 10.1117/12.592971

DO - 10.1117/12.592971

M3 - Conference contribution

AN - SCOPUS:21844453194

VL - 5725

SP - 371

EP - 378

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Tsen, K.-T.

A2 - Song, J.-J.

A2 - Jiang, H.

T2 - Ultrafast Phenomena in Semiconductors and Nanostructure

Y2 - 24 January 2005 through 27 January 2005

ER -

Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy

Abstract

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Keywords

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