Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy

W. Liang, Kong-Thon Tsen, D. K. Ferry, Hai Lu, William J. Schaff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Non-equilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the bandgap of InN cannot be around 1.89 eV; but are consistent with a bandgap of around 0.8 eV. In addition, they disprove the idea that 0.8 eV-luminescence observed recently in InN is due to deep level radiative emission in InN.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.-T. Tsen, J.-J. Song, H. Jiang
Pages371-378
Number of pages8
Volume5725
DOIs
StatePublished - 2005
EventUltrafast Phenomena in Semiconductors and Nanostructure - San Jose, CA, United States
Duration: Jan 24 2005Jan 27 2005

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure
CountryUnited States
CitySan Jose, CA
Period1/24/051/27/05

Keywords

  • Bandgap
  • InN
  • Optical phonons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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