Studies of longitudinal optical phonons in GaN by subpicosecond timeresolved Raman Spectroscopy

Kong-Thon Tsen, Juliann G. Klang, D. K. Ferry, H. Morkoç

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The lifetime of longitudinal optical phonon mode in GaN has been measured by subpicosecond time-resolved Raman spectroscopy for photoexcited electron-hole pair density ranging from 1016cm-3 to 2×10 19cm-3 and at T = 300K. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Possible mechanism for this observation has been discussed. Our experimental findings help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

Original languageEnglish (US)
Title of host publicationUltrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
DOIs
StatePublished - May 24 2007
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV - San Jose, CA, United States
Duration: Jan 22 2007Jan 24 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6471
ISSN (Print)0277-786X

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
CountryUnited States
CitySan Jose, CA
Period1/22/071/24/07

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Keywords

  • GaN
  • Lifetime
  • Raman scattering
  • Time-resolved

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Tsen, K-T., Klang, J. G., Ferry, D. K., & Morkoç, H. (2007). Studies of longitudinal optical phonons in GaN by subpicosecond timeresolved Raman Spectroscopy. In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV [64710X] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6471). https://doi.org/10.1117/12.703696