Abstract
Experimental studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A pulsed voltage input (with a 10 ns pulse width) in combination with a four-point measurement was used in a 50 Ω environment to determine the drift velocity of electrons in the two-dimensional electron gas as a function of the applied electric field. These measurements show an apparent saturation velocity near 3.1 10 7 cm/s, at a field of 140 kV/cm. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques. Local inhomogeneities in the electric field are discussed as possible mechanisms for the slightly lower value of the velocity as compared to the simulation.
Original language | English (US) |
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Title of host publication | International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT |
Editors | R. Huang, M. Yu, J.J. Liou, T. Hiramito, C. Claeys |
Pages | 2261-2264 |
Number of pages | 4 |
Volume | 3 |
State | Published - 2004 |
Event | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: Oct 18 2004 → Oct 21 2004 |
Other
Other | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 |
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Country/Territory | China |
City | Beijing |
Period | 10/18/04 → 10/21/04 |
ASJC Scopus subject areas
- General Engineering