Studies of high field transport in GaN/AlGaN heterostructures

J. M. Barker, D. K. Ferry, Stephen Goodnick, D. D. Koleske, A. Allerman, R. J. Shul

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Experimental studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A pulsed voltage input (with a 10 ns pulse width) in combination with a four-point measurement was used in a 50 Ω environment to determine the drift velocity of electrons in the two-dimensional electron gas as a function of the applied electric field. These measurements show an apparent saturation velocity near 3.1 10 7 cm/s, at a field of 140 kV/cm. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques. Local inhomogeneities in the electric field are discussed as possible mechanisms for the slightly lower value of the velocity as compared to the simulation.

Original languageEnglish (US)
Title of host publicationInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
EditorsR. Huang, M. Yu, J.J. Liou, T. Hiramito, C. Claeys
Pages2261-2264
Number of pages4
Volume3
StatePublished - 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: Oct 18 2004Oct 21 2004

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period10/18/0410/21/04

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Barker, J. M., Ferry, D. K., Goodnick, S., Koleske, D. D., Allerman, A., & Shul, R. J. (2004). Studies of high field transport in GaN/AlGaN heterostructures. In R. Huang, M. Yu, J. J. Liou, T. Hiramito, & C. Claeys (Eds.), International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT (Vol. 3, pp. 2261-2264). [G3.8]