Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy

W. Liang; Kong-Thon Tsen; C. Poweleit; H. Morkoc

doi:10.1117/12.592968

Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy

W. Liang, Kong-Thon Tsen, C. Poweleit, H. Morkoc

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure have been studied by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to holes. These experimental results have been explained in terms of various carrier scattering processes.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	K.-T. Tsen, J.-J. Song, H. Jiang
Pages	360-370
Number of pages	11
Volume	5725
DOIs	https://doi.org/10.1117/12.592968
State	Published - 2005
Event	Ultrafast Phenomena in Semiconductors and Nanostructure - San Jose, CA, United States Duration: Jan 24 2005 → Jan 27 2005

Other

Other	Ultrafast Phenomena in Semiconductors and Nanostructure
Country/Territory	United States
City	San Jose, CA
Period	1/24/05 → 1/27/05

Keywords

Electron transport
Nanostructures
Raman scattering
Velocity overshoot

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.592968

Cite this

Liang, W., Tsen, K-T., Poweleit, C., & Morkoc, H. (2005). Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy. In K-T. Tsen, J-J. Song, & H. Jiang (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5725, pp. 360-370). [54] https://doi.org/10.1117/12.592968

Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy. / Liang, W.; Tsen, Kong-Thon; Poweleit, C. et al.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.-T. Tsen; J.-J. Song; H. Jiang. Vol. 5725 2005. p. 360-370 54.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liang, W, Tsen, K-T, Poweleit, C & Morkoc, H 2005, Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy. in K-T Tsen, J-J Song & H Jiang (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5725, 54, pp. 360-370, Ultrafast Phenomena in Semiconductors and Nanostructure, San Jose, CA, United States, 1/24/05. https://doi.org/10.1117/12.592968

@inproceedings{765bf9f99455412282cb9da61f852f3b,

title = "Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy",

abstract = "Velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure have been studied by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to holes. These experimental results have been explained in terms of various carrier scattering processes.",

keywords = "Electron transport, Nanostructures, Raman scattering, Velocity overshoot",

author = "W. Liang and Kong-Thon Tsen and C. Poweleit and H. Morkoc",

year = "2005",

doi = "10.1117/12.592968",

language = "English (US)",

volume = "5725",

pages = "360--370",

editor = "K.-T. Tsen and J.-J. Song and H. Jiang",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Ultrafast Phenomena in Semiconductors and Nanostructure ; Conference date: 24-01-2005 Through 27-01-2005",

}

TY - GEN

T1 - Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy

AU - Liang, W.

AU - Tsen, Kong-Thon

AU - Poweleit, C.

AU - Morkoc, H.

PY - 2005

Y1 - 2005

N2 - Velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure have been studied by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to holes. These experimental results have been explained in terms of various carrier scattering processes.

AB - Velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure have been studied by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to holes. These experimental results have been explained in terms of various carrier scattering processes.

KW - Electron transport

KW - Nanostructures

KW - Raman scattering

KW - Velocity overshoot

UR - http://www.scopus.com/inward/record.url?scp=21844461556&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21844461556&partnerID=8YFLogxK

U2 - 10.1117/12.592968

DO - 10.1117/12.592968

M3 - Conference contribution

AN - SCOPUS:21844461556

VL - 5725

SP - 360

EP - 370

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Tsen, K.-T.

A2 - Song, J.-J.

A2 - Jiang, H.

T2 - Ultrafast Phenomena in Semiconductors and Nanostructure

Y2 - 24 January 2005 through 27 January 2005

ER -

Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this