Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy

W. Liang, Kong-Thon Tsen, C. Poweleit, H. Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure have been studied by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to holes. These experimental results have been explained in terms of various carrier scattering processes.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.-T. Tsen, J.-J. Song, H. Jiang
Pages360-370
Number of pages11
Volume5725
DOIs
StatePublished - 2005
EventUltrafast Phenomena in Semiconductors and Nanostructure - San Jose, CA, United States
Duration: Jan 24 2005Jan 27 2005

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure
CountryUnited States
CitySan Jose, CA
Period1/24/051/27/05

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Keywords

  • Electron transport
  • Nanostructures
  • Raman scattering
  • Velocity overshoot

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Liang, W., Tsen, K-T., Poweleit, C., & Morkoc, H. (2005). Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy. In K-T. Tsen, J-J. Song, & H. Jiang (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5725, pp. 360-370). [54] https://doi.org/10.1117/12.592968