Studies of Diffused Phosphorus Emitters: Saturation Current, Surface Recombination Velocity, and Quantum Efficiency

R. R. King; R. A. Sinton; R. M. Swanson

doi:10.1109/16.46368

Studies of Diffused Phosphorus Emitters: Saturation Current, Surface Recombination Velocity, and Quantum Efficiency

R. R. King, R. A. Sinton, R. M. Swanson

Research output: Contribution to journal › Article › peer-review

176 Scopus citations

Abstract

The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.

Original language	English (US)
Pages (from-to)	365-371
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	37
Issue number	2
DOIs	https://doi.org/10.1109/16.46368
State	Published - Feb 1990
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{220f1ecd5d8a46e2b94c5b20a169b6a3,

title = "Studies of Diffused Phosphorus Emitters: Saturation Current, Surface Recombination Velocity, and Quantum Efficiency",

abstract = "The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.",

author = "King, {R. R.} and Sinton, {R. A.} and Swanson, {R. M.}",

note = "Funding Information: Manuscript received April 30, 1989; revised October 2, 1989. This work was supported by the Department of Energy through Sandia National Laboratories. The authors are with Stanford University, Stanford, CA 94305. IEEE Log Number 8932891.",

year = "1990",

month = feb,

doi = "10.1109/16.46368",

language = "English (US)",

volume = "37",

pages = "365--371",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Studies of Diffused Phosphorus Emitters

T2 - Saturation Current, Surface Recombination Velocity, and Quantum Efficiency

AU - King, R. R.

AU - Sinton, R. A.

AU - Swanson, R. M.

N1 - Funding Information: Manuscript received April 30, 1989; revised October 2, 1989. This work was supported by the Department of Energy through Sandia National Laboratories. The authors are with Stanford University, Stanford, CA 94305. IEEE Log Number 8932891.

PY - 1990/2

Y1 - 1990/2

N2 - The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.

AB - The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0025387203&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025387203&partnerID=8YFLogxK

U2 - 10.1109/16.46368

DO - 10.1109/16.46368

M3 - Article

AN - SCOPUS:0025387203

VL - 37

SP - 365

EP - 371

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 2

ER -

Studies of Diffused Phosphorus Emitters: Saturation Current, Surface Recombination Velocity, and Quantum Efficiency

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