Abstract
The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 365-371 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 37 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1990 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)
Cite this
Studies of Diffused Phosphorus Emitters : Saturation Current, Surface Recombination Velocity, and Quantum Efficiency. / King, Richard; Sinton, R. A.; Swanson, R. M.
In: IEEE Transactions on Electron Devices, Vol. 37, No. 2, 1990, p. 365-371.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Studies of Diffused Phosphorus Emitters
T2 - Saturation Current, Surface Recombination Velocity, and Quantum Efficiency
AU - King, Richard
AU - Sinton, R. A.
AU - Swanson, R. M.
PY - 1990
Y1 - 1990
N2 - The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.
AB - The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0025387203&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025387203&partnerID=8YFLogxK
U2 - 10.1109/16.46368
DO - 10.1109/16.46368
M3 - Article
AN - SCOPUS:0025387203
VL - 37
SP - 365
EP - 371
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 2
ER -