Studies of Diffused Phosphorus Emitters: Saturation Current, Surface Recombination Velocity, and Quantum Efficiency

R. R. King, R. A. Sinton, R. M. Swanson

Research output: Contribution to journalArticle

164 Scopus citations

Abstract

The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.

Original languageEnglish (US)
Pages (from-to)365-371
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume37
Issue number2
DOIs
StatePublished - Feb 1990
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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