Abstract
The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.
Original language | English (US) |
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Pages (from-to) | 365-371 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 37 |
Issue number | 2 |
DOIs | |
State | Published - Feb 1990 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering