Studies of Diffused Phosphorus Emitters: Saturation Current, Surface Recombination Velocity, and Quantum Efficiency

Richard King, R. A. Sinton, R. M. Swanson

Research output: Contribution to journalArticle

158 Citations (Scopus)

Abstract

The surface recombination velocity s for silicon surfaces passivated with thermal oxide, is experimentally determined as a function of surface phosphorus concentration for a variety of oxidation, anneal, and surface conditions. This was accomplished by measuring the emitter saturation current density J0 of transparent diffusions for which the J0 is strongly dependent on s. At the lowest doping levels, the value of s was confirmed by measurements of s. on substrates with uniform phosphorus doping. The impact of these measurements on solar cell design is discussed.

Original languageEnglish (US)
Pages (from-to)365-371
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume37
Issue number2
DOIs
StatePublished - 1990
Externally publishedYes

Fingerprint

Quantum efficiency
Phosphorus
phosphorus
quantum efficiency
emitters
saturation
Doping (additives)
Silicon
Oxides
Solar cells
Current density
solar cells
current density
Oxidation
oxidation
oxides
silicon
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Studies of Diffused Phosphorus Emitters : Saturation Current, Surface Recombination Velocity, and Quantum Efficiency. / King, Richard; Sinton, R. A.; Swanson, R. M.

In: IEEE Transactions on Electron Devices, Vol. 37, No. 2, 1990, p. 365-371.

Research output: Contribution to journalArticle

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