Studies of Diffused Boron Emitters

Saturation Current, Bandgap Narrowing, and Surface Recombination Velocity

Research output: Contribution to journalArticle

86 Citations (Scopus)

Abstract

The emitter saturation current density J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J0 measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3 × 1017 to 3 × 1019 cm-3.

Original languageEnglish (US)
Pages (from-to)1399-1409
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume38
Issue number6
DOIs
StatePublished - 1991
Externally publishedYes

Fingerprint

Boron
emitters
boron
Energy gap
saturation
Oxides
oxides
Silicon
Current density
Doping (additives)
current density
silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

@article{c9088b32c2f442b9936fbe17d5c812ae,
title = "Studies of Diffused Boron Emitters: Saturation Current, Bandgap Narrowing, and Surface Recombination Velocity",
abstract = "The emitter saturation current density J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J0 measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3 × 1017 to 3 × 1019 cm-3.",
author = "Richard King",
year = "1991",
doi = "10.1109/16.81632",
language = "English (US)",
volume = "38",
pages = "1399--1409",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - Studies of Diffused Boron Emitters

T2 - Saturation Current, Bandgap Narrowing, and Surface Recombination Velocity

AU - King, Richard

PY - 1991

Y1 - 1991

N2 - The emitter saturation current density J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J0 measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3 × 1017 to 3 × 1019 cm-3.

AB - The emitter saturation current density J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J0 measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3 × 1017 to 3 × 1019 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=0026172209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026172209&partnerID=8YFLogxK

U2 - 10.1109/16.81632

DO - 10.1109/16.81632

M3 - Article

VL - 38

SP - 1399

EP - 1409

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 6

ER -