Studies of Diffused Boron Emitters: Saturation Current, Bandgap Narrowing, and Surface Recombination Velocity

Research output: Contribution to journalArticle

88 Scopus citations

Abstract

The emitter saturation current density J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J0 measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3 × 1017 to 3 × 1019 cm-3.

Original languageEnglish (US)
Pages (from-to)1399-1409
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume38
Issue number6
DOIs
StatePublished - Jun 1991
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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