Studies of carrier dynamics in InxGa1-xAs1-yNy by picosecond Raman spectroscopy

Y. Chen, Kong-Thon Tsen, D. K. Ferry

Research output: Contribution to journalArticle

Abstract

Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown InxGa1-xAs1-yNy (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n≅1018 cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Original languageEnglish (US)
Pages (from-to)297-300
Number of pages4
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 2002

Fingerprint

Electron temperature
electron distribution
Raman spectroscopy
Energy dissipation
energy dissipation
electron energy
Organic Chemicals
Laser excitation
Electrons
Epilayers
Organic chemicals
metalorganic chemical vapor deposition
Carrier concentration
Chemical vapor deposition
Laser pulses
pulse duration
Metals
Substrates
excitation
lasers

Keywords

  • InGaAsN
  • Raman spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Studies of carrier dynamics in InxGa1-xAs1-yNy by picosecond Raman spectroscopy. / Chen, Y.; Tsen, Kong-Thon; Ferry, D. K.

In: Physica B: Condensed Matter, Vol. 314, No. 1-4, 03.2002, p. 297-300.

Research output: Contribution to journalArticle

@article{e1f208454d5d483d8bb24ed00f0f7fcd,
title = "Studies of carrier dynamics in InxGa1-xAs1-yNy by picosecond Raman spectroscopy",
abstract = "Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown InxGa1-xAs1-yNy (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n≅1018 cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.",
keywords = "InGaAsN, Raman spectroscopy",
author = "Y. Chen and Kong-Thon Tsen and Ferry, {D. K.}",
year = "2002",
month = "3",
doi = "10.1016/S0921-4526(01)01398-9",
language = "English (US)",
volume = "314",
pages = "297--300",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Studies of carrier dynamics in InxGa1-xAs1-yNy by picosecond Raman spectroscopy

AU - Chen, Y.

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

PY - 2002/3

Y1 - 2002/3

N2 - Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown InxGa1-xAs1-yNy (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n≅1018 cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

AB - Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown InxGa1-xAs1-yNy (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n≅1018 cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

KW - InGaAsN

KW - Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0036503350&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036503350&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)01398-9

DO - 10.1016/S0921-4526(01)01398-9

M3 - Article

AN - SCOPUS:0036503350

VL - 314

SP - 297

EP - 300

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -