Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown InxGa1-xAs1-yNy (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n≅1018 cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.
- Raman spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering