Abstract
This work focuses on the structure and electronic transport in atomistic models of silicon suboxides (a-SiOx; x = 1.3,1.5 and 1.7) used in the fabrication of a Physical Unclonable Function (PUF) devices. Molecular dynamics and density functional theory simulations were used to obtain the structural, electronic, and vibrational properties that contribute to electronic transport in a-SiOx. The percentage of Si-[Si1, O3] and Si-[Si3, O1], observed in a-SiO1.3, decrease with increasing O ratio. Vibrations in a-SiOx showed peaks that result from topological defects. The electronic conduction path in a-SiOx favored Si-rich regions and Si atoms with dangling bonds formed charge-trapping sites. For doped a-SiOx, the type of doping results in new conduction paths, hence qualifying a-SiOx as a viable candidate for PUF fabrication as reported by Kozicki [Patent-Publication-No.: US2021/0175185A1, 2021].
Original language | English (US) |
---|---|
Article number | 100179 |
Journal | Journal of Non-Crystalline Solids: X |
Volume | 18 |
DOIs | |
State | Published - Jun 2023 |
Externally published | Yes |
Keywords
- DFT
- Molecular dynamics
- PUF
- Silicon
- Suboxides
- Tersoff
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry