Abstract
Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 792-795 |
| Number of pages | 4 |
| Journal | Journal of Materials Research |
| Volume | 6 |
| Issue number | 4 |
| State | Published - Apr 1991 |
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ASJC Scopus subject areas
- Materials Science(all)
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Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material. / Visitserngtrakul, Supapan; Krause, Stephen; Barry, John C.
In: Journal of Materials Research, Vol. 6, No. 4, 04.1991, p. 792-795.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material
AU - Visitserngtrakul, Supapan
AU - Krause, Stephen
AU - Barry, John C.
PY - 1991/4
Y1 - 1991/4
N2 - Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.
AB - Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.
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M3 - Article
AN - SCOPUS:0026137865
VL - 6
SP - 792
EP - 795
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 4
ER -