Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

Supapan Visitserngtrakul, Stephen Krause, John C. Barry

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five and seven-membered rings and no dangling bonds.

Original languageEnglish (US)
Pages (from-to)792-795
Number of pages4
JournalJournal of Materials Research
Volume6
Issue number4
DOIs
StatePublished - Apr 1991

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material'. Together they form a unique fingerprint.

  • Cite this