Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

Supapan Visitserngtrakul; Stephen Krause; John C. Barry

doi:10.1557/JMR.1991.0792

Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

Supapan Visitserngtrakul, Stephen Krause, John C. Barry

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Abstract

Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 10¹¹ cm^-2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five and seven-membered rings and no dangling bonds.

Original language	English (US)
Pages (from-to)	792-795
Number of pages	4
Journal	Journal of Materials Research
Volume	6
Issue number	4
DOIs	https://doi.org/10.1557/JMR.1991.0792
State	Published - Apr 1991

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material",

abstract = "Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five and seven-membered rings and no dangling bonds.",

author = "Supapan Visitserngtrakul and Stephen Krause and Barry, {John C.}",

note = "Funding Information: We acknowledge the support of this research by the NSF Grant DMR-8901370 and NIST Grant 60NANB9-D0966 and by DNA Contract DNA-IACRO-88-800. We also acknowledge staff assistance and facility use in the National Center for High Resolution Electron Micros- Funding Information: copy, Arizona State University, supported by National Science Foundation Grant DMR-8611609. Thanks also to B. F. Cordts of the Ibis Technology Corp., Danvers, Massachusetts, for providing the SIMOX samples examined in this work, P. Pirouz of Case Western University, and C. J. D. Hetherington of National Center for Electron Microscopy, Lawrence Berkeley Laboratory, for profitable discussions.",

year = "1991",

month = apr,

doi = "10.1557/JMR.1991.0792",

language = "English (US)",

volume = "6",

pages = "792--795",

journal = "Journal of Materials Research",

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publisher = "Materials Research Society",

number = "4",

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T1 - Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

AU - Visitserngtrakul, Supapan

AU - Krause, Stephen

AU - Barry, John C.

N1 - Funding Information: We acknowledge the support of this research by the NSF Grant DMR-8901370 and NIST Grant 60NANB9-D0966 and by DNA Contract DNA-IACRO-88-800. We also acknowledge staff assistance and facility use in the National Center for High Resolution Electron Micros- Funding Information: copy, Arizona State University, supported by National Science Foundation Grant DMR-8611609. Thanks also to B. F. Cordts of the Ibis Technology Corp., Danvers, Massachusetts, for providing the SIMOX samples examined in this work, P. Pirouz of Case Western University, and C. J. D. Hetherington of National Center for Electron Microscopy, Lawrence Berkeley Laboratory, for profitable discussions.

PY - 1991/4

Y1 - 1991/4

N2 - Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five and seven-membered rings and no dangling bonds.

AB - Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five and seven-membered rings and no dangling bonds.

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JF - Journal of Materials Research

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Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

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