Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

Supapan Visitserngtrakul, Stephen Krause, John C. Barry

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 1011 cm-2 below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five- and seven-membered rings and no dangling bonds.

Original languageEnglish (US)
Pages (from-to)792-795
Number of pages4
JournalJournal of Materials Research
Volume6
Issue number4
StatePublished - Apr 1991

Fingerprint

Silicon
insulators
Oxygen
dosage
Defects
defects
silicon
oxygen
High resolution electron microscopy
electron microscopy
coesite
Diamond
Dangling bonds
high resolution
Oxides
ribbons
Diamonds
diamonds
oxides
rings

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material. / Visitserngtrakul, Supapan; Krause, Stephen; Barry, John C.

In: Journal of Materials Research, Vol. 6, No. 4, 04.1991, p. 792-795.

Research output: Contribution to journalArticle

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