Structure of thermally induced microdefects in Czochralski silicon after high-temperature annealing

F. A. Ponce, T. Yamashita, S. Hahn

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

The microstructure of Czochralski silicon annealed at high temperatures has been investigated using high resolution transmission electron microscopy. After prolonged heat treatments at temperatures close to 1200°C, two types of microdefects are observed: (a) small polyhedral oxide precipitates, with typical diameters of about 15 nm and facets along crystalline planes of the silicon matrix, and (b) planar faults along {111} planes which have been directly identified as extrinsic stacking faults bounded by Frank-type dislocations.

Original languageEnglish (US)
Pages (from-to)1051-1053
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number11
DOIs
StatePublished - Dec 1 1983
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Structure of thermally induced microdefects in Czochralski silicon after high-temperature annealing'. Together they form a unique fingerprint.

Cite this