Structure of the InP/SiO2 interface

Z. Liliental, O. L. Krivanek, J. F. Wager, S. M. Goodnick

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

InP/SiO2 interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO2 desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350°C is shown to consist of two separate layers, an inner one of 30-70 Å thickness and probably composition InPO4, and an outer one of 60-Å thickness and probably composition In2O3.

Original languageEnglish (US)
Pages (from-to)889-891
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number9
DOIs
StatePublished - Dec 1 1985
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Liliental, Z., Krivanek, O. L., Wager, J. F., & Goodnick, S. M. (1985). Structure of the InP/SiO2 interface. Applied Physics Letters, 46(9), 889-891. https://doi.org/10.1063/1.95877