Structure of the InP/SiO2 interface

Z. Liliental; O. L. Krivanek; J. F. Wager; S. M. Goodnick

doi:10.1063/1.95877

Structure of the InP/SiO₂ interface

Z. Liliental, O. L. Krivanek, J. F. Wager, S. M. Goodnick

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Abstract

InP/SiO₂ interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO₂ desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350°C is shown to consist of two separate layers, an inner one of 30-70 Å thickness and probably composition InPO₄, and an outer one of 60-Å thickness and probably composition In₂O₃.

Original language	English (US)
Pages (from-to)	889-891
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	9
DOIs	https://doi.org/10.1063/1.95877
State	Published - 1985
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.95877

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title = "Structure of the InP/SiO2 interface",

abstract = "InP/SiO2 interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 {\AA} peak to peak depending on the InP surface treatment prior to SiO2 desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350°C is shown to consist of two separate layers, an inner one of 30-70 {\AA} thickness and probably composition InPO4, and an outer one of 60-{\AA} thickness and probably composition In2O3.",

author = "Z. Liliental and Krivanek, {O. L.} and Wager, {J. F.} and Goodnick, {S. M.}",

year = "1985",

doi = "10.1063/1.95877",

language = "English (US)",

volume = "46",

pages = "889--891",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Structure of the InP/SiO2 interface

AU - Liliental, Z.

AU - Krivanek, O. L.

AU - Wager, J. F.

AU - Goodnick, S. M.

PY - 1985

Y1 - 1985

N2 - InP/SiO2 interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO2 desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350°C is shown to consist of two separate layers, an inner one of 30-70 Å thickness and probably composition InPO4, and an outer one of 60-Å thickness and probably composition In2O3.

AB - InP/SiO2 interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO2 desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350°C is shown to consist of two separate layers, an inner one of 30-70 Å thickness and probably composition InPO4, and an outer one of 60-Å thickness and probably composition In2O3.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Structure of the InP/SiO₂ interface

Abstract

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