Structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material

Stephen Krause, C. O. Jung, S. R. Wilson

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material was directly studied by high-resolution transmission electron microscopy. Epitaxially aligned precipitates 5-25 nm in size were located in the matrix silicon above and below the buried oxide layer with a density of 1×1010 cm-3. Precipitate-matrix interface strain was minimized by twinning and stacking fault formation in the precipitate and by amorphous silicon dioxide at the interface. The wide range of depths of the precipitates suggests that they are formed from trace amounts of carbon that are accelerated along with oxygen after mass analysis.

Original languageEnglish (US)
Pages (from-to)63-65
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number1
DOIs
StatePublished - 1988

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silicon carbides
precipitates
insulators
silicon
oxygen
twinning
matrices
crystal defects
amorphous silicon
silicon dioxide
transmission electron microscopy
oxides
carbon
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material. / Krause, Stephen; Jung, C. O.; Wilson, S. R.

In: Applied Physics Letters, Vol. 53, No. 1, 1988, p. 63-65.

Research output: Contribution to journalArticle

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