Structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material

Stephen Krause; C. O. Jung; S. R. Wilson

doi:10.1063/1.100568

Structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material

Stephen Krause, C. O. Jung, S. R. Wilson

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9 Scopus citations

Abstract

The structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material was directly studied by high-resolution transmission electron microscopy. Epitaxially aligned precipitates 5-25 nm in size were located in the matrix silicon above and below the buried oxide layer with a density of 1×10¹⁰ cm^-3. Precipitate-matrix interface strain was minimized by twinning and stacking fault formation in the precipitate and by amorphous silicon dioxide at the interface. The wide range of depths of the precipitates suggests that they are formed from trace amounts of carbon that are accelerated along with oxygen after mass analysis.

Original language	English (US)
Pages (from-to)	63-65
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	1
DOIs	https://doi.org/10.1063/1.100568
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material",

abstract = "The structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material was directly studied by high-resolution transmission electron microscopy. Epitaxially aligned precipitates 5-25 nm in size were located in the matrix silicon above and below the buried oxide layer with a density of 1×1010 cm-3. Precipitate-matrix interface strain was minimized by twinning and stacking fault formation in the precipitate and by amorphous silicon dioxide at the interface. The wide range of depths of the precipitates suggests that they are formed from trace amounts of carbon that are accelerated along with oxygen after mass analysis.",

author = "Stephen Krause and Jung, {C. O.} and Wilson, {S. R.}",

year = "1988",

doi = "10.1063/1.100568",

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T1 - Structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material

AU - Krause, Stephen

AU - Jung, C. O.

AU - Wilson, S. R.

PY - 1988

Y1 - 1988

N2 - The structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material was directly studied by high-resolution transmission electron microscopy. Epitaxially aligned precipitates 5-25 nm in size were located in the matrix silicon above and below the buried oxide layer with a density of 1×1010 cm-3. Precipitate-matrix interface strain was minimized by twinning and stacking fault formation in the precipitate and by amorphous silicon dioxide at the interface. The wide range of depths of the precipitates suggests that they are formed from trace amounts of carbon that are accelerated along with oxygen after mass analysis.

AB - The structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material was directly studied by high-resolution transmission electron microscopy. Epitaxially aligned precipitates 5-25 nm in size were located in the matrix silicon above and below the buried oxide layer with a density of 1×1010 cm-3. Precipitate-matrix interface strain was minimized by twinning and stacking fault formation in the precipitate and by amorphous silicon dioxide at the interface. The wide range of depths of the precipitates suggests that they are formed from trace amounts of carbon that are accelerated along with oxygen after mass analysis.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Structure of silicon carbide precipitates in oxygen-implanted and annealed silicon-on-insulator material

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