STRUCTURE OF OXYGEN-IMPLANTED (111) SILICON BEFORE AND AFTER HEAT-PULSE ANNEALING.

Z. Liliental-Weber; Ray Carpenter; J. C. Kelly

STRUCTURE OF OXYGEN-IMPLANTED (111) SILICON BEFORE AND AFTER HEAT-PULSE ANNEALING.

Z. Liliental-Weber, Ray Carpenter, J. C. Kelly

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The structure of (111) oriented, unheated oxygen-implanted silicon (dose 7. 3 multiplied by 10**1**6cm** minus **2) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystalline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20s at 800 degree C, 900 degree C, or 1000 degree C, the amorphous layer recrystallized resulting in polycrystalline silicon, rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions.

Original language	English (US)
Title of host publication	Materials Research Society Symposia Proceedings
Editors	Thomas O. Sedgwick, Thomas E. Seidel, Bor-Yeu Tsaur
Publisher	Materials Research Soc
Pages	139-144
Number of pages	6
ISBN (Print)	0931837170
State	Published - 1986

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	52
ISSN (Print)	0272-9172

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

STRUCTURE OF OXYGEN-IMPLANTED (111) SILICON BEFORE AND AFTER HEAT-PULSE ANNEALING. / Liliental-Weber, Z.; Carpenter, Ray; Kelly, J. C.
Materials Research Society Symposia Proceedings. ed. / Thomas O. Sedgwick; Thomas E. Seidel; Bor-Yeu Tsaur. Materials Research Soc, 1986. p. 139-144 (Materials Research Society Symposia Proceedings; Vol. 52).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - The structure of (111) oriented, unheated oxygen-implanted silicon (dose 7. 3 multiplied by 10**1**6cm** minus **2) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystalline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20s at 800 degree C, 900 degree C, or 1000 degree C, the amorphous layer recrystallized resulting in polycrystalline silicon, rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions.

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M3 - Conference contribution

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STRUCTURE OF OXYGEN-IMPLANTED (111) SILICON BEFORE AND AFTER HEAT-PULSE ANNEALING.

Abstract

Publication series

ASJC Scopus subject areas

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