STRUCTURE OF OXYGEN-IMPLANTED (111) SILICON BEFORE AND AFTER HEAT-PULSE ANNEALING.

Z. Liliental-Weber, Ray Carpenter, J. C. Kelly

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Scopus citations

    Abstract

    The structure of (111) oriented, unheated oxygen-implanted silicon (dose 7. 3 multiplied by 10**1**6cm** minus **2) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystalline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20s at 800 degree C, 900 degree C, or 1000 degree C, the amorphous layer recrystallized resulting in polycrystalline silicon, rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions.

    Original languageEnglish (US)
    Title of host publicationMaterials Research Society Symposia Proceedings
    EditorsThomas O. Sedgwick, Thomas E. Seidel, Bor-Yeu Tsaur
    PublisherMaterials Research Soc
    Pages139-144
    Number of pages6
    ISBN (Print)0931837170
    StatePublished - Dec 1 1986

    Publication series

    NameMaterials Research Society Symposia Proceedings
    Volume52
    ISSN (Print)0272-9172

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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