STRUCTURE OF OXYGEN-IMPLANTED (111) SILICON BEFORE AND AFTER HEAT-PULSE ANNEALING.

Z. Liliental-Weber, Ray Carpenter, J. C. Kelly

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The structure of (111) oriented, unheated oxygen-implanted silicon (dose 7. 3 multiplied by 10**1**6cm** minus **2) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystalline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20s at 800 degree C, 900 degree C, or 1000 degree C, the amorphous layer recrystallized resulting in polycrystalline silicon, rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsThomas O. Sedgwick, Thomas E. Seidel, Bor-Yeu Tsaur
PublisherMaterials Research Soc
Pages139-144
Number of pages6
ISBN (Print)0931837170
StatePublished - Dec 1 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume52
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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