Microdefects are common in semiconducting materials of the highest quality. Some are present in as-grown materials, others appear during subsequent processing, especially when subjected to thermal treatments. Their identification has not been possible until very recently because their size is relatively too small to be observed by conventional electron microscopy. A review of recent applications of HREM to the study of microdefects in silicon and GaAs is presented in this paper.
|Original language||English (US)|
|Title of host publication||Institute of Physics Conference Series|
|Number of pages||10|
|State||Published - Dec 1 1985|
|Name||Institute of Physics Conference Series|
ASJC Scopus subject areas
- Physics and Astronomy(all)