STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS.

F. A. Ponce

STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Microdefects are common in semiconducting materials of the highest quality. Some are present in as-grown materials, others appear during subsequent processing, especially when subjected to thermal treatments. Their identification has not been possible until very recently because their size is relatively too small to be observed by conventional electron microscopy. A review of recent applications of HREM to the study of microdefects in silicon and GaAs is presented in this paper.

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Pages	1-10
Number of pages	10
Edition	76
State	Published - Dec 1 1985
Externally published	Yes

Publication series

Name	Institute of Physics Conference Series
Number	76
ISSN (Print)	0373-0751

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS.",

abstract = "Microdefects are common in semiconducting materials of the highest quality. Some are present in as-grown materials, others appear during subsequent processing, especially when subjected to thermal treatments. Their identification has not been possible until very recently because their size is relatively too small to be observed by conventional electron microscopy. A review of recent applications of HREM to the study of microdefects in silicon and GaAs is presented in this paper.",

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year = "1985",

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N2 - Microdefects are common in semiconducting materials of the highest quality. Some are present in as-grown materials, others appear during subsequent processing, especially when subjected to thermal treatments. Their identification has not been possible until very recently because their size is relatively too small to be observed by conventional electron microscopy. A review of recent applications of HREM to the study of microdefects in silicon and GaAs is presented in this paper.

AB - Microdefects are common in semiconducting materials of the highest quality. Some are present in as-grown materials, others appear during subsequent processing, especially when subjected to thermal treatments. Their identification has not been possible until very recently because their size is relatively too small to be observed by conventional electron microscopy. A review of recent applications of HREM to the study of microdefects in silicon and GaAs is presented in this paper.

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M3 - Conference contribution

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STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS.

Abstract

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ASJC Scopus subject areas

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