STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Microdefects are common in semiconducting materials of the highest quality. Some are present in as-grown materials, others appear during subsequent processing, especially when subjected to thermal treatments. Their identification has not been possible until very recently because their size is relatively too small to be observed by conventional electron microscopy. A review of recent applications of HREM to the study of microdefects in silicon and GaAs is presented in this paper.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Pages1-10
Number of pages10
Edition76
StatePublished - 1985
Externally publishedYes

Fingerprint

High resolution electron microscopy
Electron microscopy
Heat treatment
Silicon
Processing

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ponce, F. (1985). STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS. In Institute of Physics Conference Series (76 ed., pp. 1-10)

STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS. / Ponce, Fernando.

Institute of Physics Conference Series. 76. ed. 1985. p. 1-10.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ponce, F 1985, STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS. in Institute of Physics Conference Series. 76 edn, pp. 1-10.
Ponce F. STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS. In Institute of Physics Conference Series. 76 ed. 1985. p. 1-10
Ponce, Fernando. / STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS. Institute of Physics Conference Series. 76. ed. 1985. pp. 1-10
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