Abstract

Copper-doped WO3 films, which are an active media for programmable metallization cell memory devices, are studied. The highlights of this study are the intercalation products forming on the interface between the WO3 and Cu during thermal evaporation and also after thermal or photothermal diffusion of Cu into WO3 films. The diffusion profile is established using Auger spectroscopy. Further characterization is provided using Raman spectroscopy which gives evidence for formation of products with a lower valence state related to W and oxidation products related to Cu. The composition of the intercalation products containing Cu is confirmed using X-ray diffraction which shows the formation of copper oxides and tungstates.

Original languageEnglish (US)
Pages (from-to)1844-1848
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume353
Issue number18-21
DOIs
StatePublished - Jun 15 2007

Fingerprint

tungsten oxides
Intercalation
Oxide films
Tungsten
oxide films
Copper
solid state
Data storage equipment
copper
Thermal evaporation
Copper oxides
products
Metallizing
intercalation
Raman spectroscopy
Spectroscopy
X ray diffraction
Oxidation
tungstates
copper oxides

Keywords

  • Microcrystallinity
  • Phonons
  • Raman scattering
  • X-ray diffraction

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Structure of copper-doped tungsten oxide films for solid-state memory. / Gopalan, C.; Kozicki, Michael; Bhagat, S.; Puthen Thermadam, S. C.; Alford, Terry; Mitkova, M.

In: Journal of Non-Crystalline Solids, Vol. 353, No. 18-21, 15.06.2007, p. 1844-1848.

Research output: Contribution to journalArticle

Gopalan, C. ; Kozicki, Michael ; Bhagat, S. ; Puthen Thermadam, S. C. ; Alford, Terry ; Mitkova, M. / Structure of copper-doped tungsten oxide films for solid-state memory. In: Journal of Non-Crystalline Solids. 2007 ; Vol. 353, No. 18-21. pp. 1844-1848.
@article{36679b0d9abe487889f6c7164a8d1084,
title = "Structure of copper-doped tungsten oxide films for solid-state memory",
abstract = "Copper-doped WO3 films, which are an active media for programmable metallization cell memory devices, are studied. The highlights of this study are the intercalation products forming on the interface between the WO3 and Cu during thermal evaporation and also after thermal or photothermal diffusion of Cu into WO3 films. The diffusion profile is established using Auger spectroscopy. Further characterization is provided using Raman spectroscopy which gives evidence for formation of products with a lower valence state related to W and oxidation products related to Cu. The composition of the intercalation products containing Cu is confirmed using X-ray diffraction which shows the formation of copper oxides and tungstates.",
keywords = "Microcrystallinity, Phonons, Raman scattering, X-ray diffraction",
author = "C. Gopalan and Michael Kozicki and S. Bhagat and {Puthen Thermadam}, {S. C.} and Terry Alford and M. Mitkova",
year = "2007",
month = "6",
day = "15",
doi = "10.1016/j.jnoncrysol.2007.02.054",
language = "English (US)",
volume = "353",
pages = "1844--1848",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "18-21",

}

TY - JOUR

T1 - Structure of copper-doped tungsten oxide films for solid-state memory

AU - Gopalan, C.

AU - Kozicki, Michael

AU - Bhagat, S.

AU - Puthen Thermadam, S. C.

AU - Alford, Terry

AU - Mitkova, M.

PY - 2007/6/15

Y1 - 2007/6/15

N2 - Copper-doped WO3 films, which are an active media for programmable metallization cell memory devices, are studied. The highlights of this study are the intercalation products forming on the interface between the WO3 and Cu during thermal evaporation and also after thermal or photothermal diffusion of Cu into WO3 films. The diffusion profile is established using Auger spectroscopy. Further characterization is provided using Raman spectroscopy which gives evidence for formation of products with a lower valence state related to W and oxidation products related to Cu. The composition of the intercalation products containing Cu is confirmed using X-ray diffraction which shows the formation of copper oxides and tungstates.

AB - Copper-doped WO3 films, which are an active media for programmable metallization cell memory devices, are studied. The highlights of this study are the intercalation products forming on the interface between the WO3 and Cu during thermal evaporation and also after thermal or photothermal diffusion of Cu into WO3 films. The diffusion profile is established using Auger spectroscopy. Further characterization is provided using Raman spectroscopy which gives evidence for formation of products with a lower valence state related to W and oxidation products related to Cu. The composition of the intercalation products containing Cu is confirmed using X-ray diffraction which shows the formation of copper oxides and tungstates.

KW - Microcrystallinity

KW - Phonons

KW - Raman scattering

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=34247897217&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247897217&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2007.02.054

DO - 10.1016/j.jnoncrysol.2007.02.054

M3 - Article

AN - SCOPUS:34247897217

VL - 353

SP - 1844

EP - 1848

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 18-21

ER -