STRUCTURE AND PROPERTIES OF ULTRATHIN Ge-Si SUPERLATTICES.

J. Bevk; J. P. Mannaerts; L. C. Feldman; B. A. Davidson; W. P. Lowe; A. M. Glass; T. P. Pearsall; J. Menendez; A. Pinczuk; A. Ourmazd

STRUCTURE AND PROPERTIES OF ULTRATHIN Ge-Si SUPERLATTICES.

J. Bevk, J. P. Mannaerts, L. C. Feldman, B. A. Davidson, W. P. Lowe, A. M. Glass, T. P. Pearsall, J. Menendez, A. Pinczuk, A. Ourmazd

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

We report the synthesis, structural characterization, and optical studies of ultrathin Ge-Si superlattices with individual sublayers smaller than the Si unit cell, grown by MBE on (001) silicon substrates. Structures are fabricated one monolayer at a time in a configuration GeGeSiSiGeGe. . . , resulting in either ordered alloys or complex cell superlattices. Rutherford backscattering and channeling experiments on these heterostructures indicate excellent crystallinity with tetragonal distortion as high as 3. 5%. Electron diffraction patterns exhibit characteristic superlattice reflections indicative of one-dimensional layering with periodicity of four monolayers. X-ray scans along the growth direction at the (002) position in reciprocal space reveal a strong peak not observed in random GeSi alloys. This scattering is attributed indirectly to the GeSi ordered phase.

Original language	English (US)
Title of host publication	Materials Research Society Symposia Proceedings
Editors	John C.C. Fan, John M. Poate
Publisher	Materials Research Soc
Pages	189-196
Number of pages	8
ISBN (Print)	0931837332
State	Published - Dec 1 1986
Externally published	Yes

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	67
ISSN (Print)	0272-9172

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Bevk, J., Mannaerts, J. P., Feldman, L. C., Davidson, B. A., Lowe, W. P., Glass, A. M., Pearsall, T. P., Menendez, J., Pinczuk, A., & Ourmazd, A. (1986). STRUCTURE AND PROPERTIES OF ULTRATHIN Ge-Si SUPERLATTICES. In J. C. C. Fan, & J. M. Poate (Eds.), Materials Research Society Symposia Proceedings (pp. 189-196). (Materials Research Society Symposia Proceedings; Vol. 67). Materials Research Soc.

STRUCTURE AND PROPERTIES OF ULTRATHIN Ge-Si SUPERLATTICES. / Bevk, J.; Mannaerts, J. P.; Feldman, L. C.; Davidson, B. A.; Lowe, W. P.; Glass, A. M.; Pearsall, T. P.; Menendez, J.; Pinczuk, A.; Ourmazd, A.

Materials Research Society Symposia Proceedings. ed. / John C.C. Fan; John M. Poate. Materials Research Soc, 1986. p. 189-196 (Materials Research Society Symposia Proceedings; Vol. 67).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bevk, J. ; Mannaerts, J. P. ; Feldman, L. C. ; Davidson, B. A. ; Lowe, W. P. ; Glass, A. M. ; Pearsall, T. P. ; Menendez, J. ; Pinczuk, A. ; Ourmazd, A. / STRUCTURE AND PROPERTIES OF ULTRATHIN Ge-Si SUPERLATTICES. Materials Research Society Symposia Proceedings. editor / John C.C. Fan ; John M. Poate. Materials Research Soc, 1986. pp. 189-196 (Materials Research Society Symposia Proceedings).

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abstract = "We report the synthesis, structural characterization, and optical studies of ultrathin Ge-Si superlattices with individual sublayers smaller than the Si unit cell, grown by MBE on (001) silicon substrates. Structures are fabricated one monolayer at a time in a configuration GeGeSiSiGeGe. . . , resulting in either ordered alloys or complex cell superlattices. Rutherford backscattering and channeling experiments on these heterostructures indicate excellent crystallinity with tetragonal distortion as high as 3. 5%. Electron diffraction patterns exhibit characteristic superlattice reflections indicative of one-dimensional layering with periodicity of four monolayers. X-ray scans along the growth direction at the (002) position in reciprocal space reveal a strong peak not observed in random GeSi alloys. This scattering is attributed indirectly to the GeSi ordered phase.",

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AU - Feldman, L. C.

AU - Davidson, B. A.

AU - Lowe, W. P.

AU - Glass, A. M.

AU - Pearsall, T. P.

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N2 - We report the synthesis, structural characterization, and optical studies of ultrathin Ge-Si superlattices with individual sublayers smaller than the Si unit cell, grown by MBE on (001) silicon substrates. Structures are fabricated one monolayer at a time in a configuration GeGeSiSiGeGe. . . , resulting in either ordered alloys or complex cell superlattices. Rutherford backscattering and channeling experiments on these heterostructures indicate excellent crystallinity with tetragonal distortion as high as 3. 5%. Electron diffraction patterns exhibit characteristic superlattice reflections indicative of one-dimensional layering with periodicity of four monolayers. X-ray scans along the growth direction at the (002) position in reciprocal space reveal a strong peak not observed in random GeSi alloys. This scattering is attributed indirectly to the GeSi ordered phase.

AB - We report the synthesis, structural characterization, and optical studies of ultrathin Ge-Si superlattices with individual sublayers smaller than the Si unit cell, grown by MBE on (001) silicon substrates. Structures are fabricated one monolayer at a time in a configuration GeGeSiSiGeGe. . . , resulting in either ordered alloys or complex cell superlattices. Rutherford backscattering and channeling experiments on these heterostructures indicate excellent crystallinity with tetragonal distortion as high as 3. 5%. Electron diffraction patterns exhibit characteristic superlattice reflections indicative of one-dimensional layering with periodicity of four monolayers. X-ray scans along the growth direction at the (002) position in reciprocal space reveal a strong peak not observed in random GeSi alloys. This scattering is attributed indirectly to the GeSi ordered phase.

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STRUCTURE AND PROPERTIES OF ULTRATHIN Ge-Si SUPERLATTICES.

Abstract

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