Structure and precipitation on a Σ = 13 tilt grain boundary in silicon

M. J. Kim; Ray Carpenter; Y. L. Chen; G. H. Schwuttke

doi:10.1016/0304-3991(92)90122-Z

Structure and precipitation on a Σ = 13 tilt grain boundary in silicon

M. J. Kim, Ray Carpenter, Y. L. Chen, G. H. Schwuttke

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8 Scopus citations

Abstract

The structure of a Σ=13 (510), [001] pure tilt grain boundary in a Czochralski-grown silicon bicrystal was characterized by high-resolution electron microscopy. The observed boundary exhibited a coincident site lattice periodicity but had an aperiodic interface dislocation core structure. Discrete impurity precipitate particles were observed at the boundary. High-spatial-resolution electron-energy-loss-spectroscopy analysis showed them to be oxide particles of the form SiO_x, with 0<x<1. The role of oxygen as an intrinsic impurity in the bicrystal on the structure of the boundary and on the oxide precipitation at the boundary is briefly discussed.

Original language	English (US)
Pages (from-to)	258-264
Number of pages	7
Journal	Ultramicroscopy
Volume	40
Issue number	3
DOIs	https://doi.org/10.1016/0304-3991(92)90122-Z
State	Published - Mar 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/0304-3991(92)90122-Z

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title = "Structure and precipitation on a Σ = 13 tilt grain boundary in silicon",

abstract = "The structure of a Σ=13 (510), [001] pure tilt grain boundary in a Czochralski-grown silicon bicrystal was characterized by high-resolution electron microscopy. The observed boundary exhibited a coincident site lattice periodicity but had an aperiodic interface dislocation core structure. Discrete impurity precipitate particles were observed at the boundary. High-spatial-resolution electron-energy-loss-spectroscopy analysis showed them to be oxide particles of the form SiOx, with 0",

author = "Kim, {M. J.} and Ray Carpenter and Chen, {Y. L.} and Schwuttke, {G. H.}",

note = "Funding Information: We would hke to acknowledge &scusslons with Dr J L RouvI~re This research was supported by the US Department of Energy, Basic Energy Sciences (grant DE-FG02-87ER45305) and the Dupont Committee for Educational Aad The electron microscopy was performed at ASU HREM Facility",

year = "1992",

month = mar,

doi = "10.1016/0304-3991(92)90122-Z",

language = "English (US)",

volume = "40",

pages = "258--264",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier",

number = "3",

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TY - JOUR

T1 - Structure and precipitation on a Σ = 13 tilt grain boundary in silicon

AU - Kim, M. J.

AU - Carpenter, Ray

AU - Chen, Y. L.

AU - Schwuttke, G. H.

N1 - Funding Information: We would hke to acknowledge &scusslons with Dr J L RouvI~re This research was supported by the US Department of Energy, Basic Energy Sciences (grant DE-FG02-87ER45305) and the Dupont Committee for Educational Aad The electron microscopy was performed at ASU HREM Facility

PY - 1992/3

Y1 - 1992/3

N2 - The structure of a Σ=13 (510), [001] pure tilt grain boundary in a Czochralski-grown silicon bicrystal was characterized by high-resolution electron microscopy. The observed boundary exhibited a coincident site lattice periodicity but had an aperiodic interface dislocation core structure. Discrete impurity precipitate particles were observed at the boundary. High-spatial-resolution electron-energy-loss-spectroscopy analysis showed them to be oxide particles of the form SiOx, with 0

AB - The structure of a Σ=13 (510), [001] pure tilt grain boundary in a Czochralski-grown silicon bicrystal was characterized by high-resolution electron microscopy. The observed boundary exhibited a coincident site lattice periodicity but had an aperiodic interface dislocation core structure. Discrete impurity precipitate particles were observed at the boundary. High-spatial-resolution electron-energy-loss-spectroscopy analysis showed them to be oxide particles of the form SiOx, with 0

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U2 - 10.1016/0304-3991(92)90122-Z

DO - 10.1016/0304-3991(92)90122-Z

M3 - Article

AN - SCOPUS:0026832903

SN - 0304-3991

VL - 40

SP - 258

EP - 264

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 3

ER -

Structure and precipitation on a Σ = 13 tilt grain boundary in silicon

Abstract

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