Structure and precipitation on a Σ = 13 tilt grain boundary in silicon

M. J. Kim, Ray Carpenter, Y. L. Chen, G. H. Schwuttke

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The structure of a Σ=13 (510), [001] pure tilt grain boundary in a Czochralski-grown silicon bicrystal was characterized by high-resolution electron microscopy. The observed boundary exhibited a coincident site lattice periodicity but had an aperiodic interface dislocation core structure. Discrete impurity precipitate particles were observed at the boundary. High-spatial-resolution electron-energy-loss-spectroscopy analysis showed them to be oxide particles of the form SiOx, with 0<x<1. The role of oxygen as an intrinsic impurity in the bicrystal on the structure of the boundary and on the oxide precipitation at the boundary is briefly discussed.

Original languageEnglish (US)
Pages (from-to)258-264
Number of pages7
JournalUltramicroscopy
Volume40
Issue number3
DOIs
StatePublished - Mar 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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