Structure and growth of the interface of Pd on a-Si:H

R. J. Nemanich, C. C. Tsai, T. W. Sigmon

Research output: Contribution to journalReview articlepeer-review

12 Scopus citations

Abstract

The structure of the Pd a-Si:H interface is probed using interference-enhanced Raman scattering. It was found that 2 nm of Pd was initially consumed to form a crystalline silicide at the Pd a-Si:H interface. Annealing to 300°C caused a spectroscopic change, which is associated with a structural change, and additional annealing at 500°C caused the formation of crystalline Si.

Original languageEnglish (US)
Pages (from-to)6828-6831
Number of pages4
JournalPhysical Review B
Volume23
Issue number12
DOIs
StatePublished - 1981
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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