Structure and defects in the amorphous Si

As:H system

Robert Nemanich, J. C. Knights

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Raman and ESR measurements were used to study the atomic bonding and defect concentrations. Features are identified in the Raman spectra which can be attributed to configurations containing SiSi, SiAs and AsAs bonds. Features due to all three of these configurations were found to simultaneously exist, thus excluding a chemically ordered model of the bonding. However, the composition dependences of the features do not follow exactly a random bonding model either. The H bonding configurations were reflected in features at ∼2000 cm-1 in the Raman spectra. It was found that the H bonding changed dramatically in the As doping to 5% As alloying region. The ESR measurements indicated a low level of singly occupied defect states in all the samples studied.

Original languageEnglish (US)
Pages (from-to)243-248
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume35-36
Issue numberPART 1
DOIs
StatePublished - 1980
Externally publishedYes

Fingerprint

Defects
defects
Paramagnetic resonance
Raman scattering
configurations
Raman spectra
Alloying
alloying
Doping (additives)
Chemical analysis

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Structure and defects in the amorphous Si : As:H system. / Nemanich, Robert; Knights, J. C.

In: Journal of Non-Crystalline Solids, Vol. 35-36, No. PART 1, 1980, p. 243-248.

Research output: Contribution to journalArticle

Nemanich, Robert ; Knights, J. C. / Structure and defects in the amorphous Si : As:H system. In: Journal of Non-Crystalline Solids. 1980 ; Vol. 35-36, No. PART 1. pp. 243-248.
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