TY - JOUR
T1 - Structure and charge transport of amorphous Cu-doped Ta2 O5
T2 - An ab initio study
AU - Thapa, Rajendra
AU - Bhattarai, Bishal
AU - Kozicki, M. N.
AU - Subedi, Kashi N.
AU - Drabold, D. A.
N1 - Funding Information:
We acknowledge the National Science Foundation for support under Grant No. DMR-1507670. We thank Dr. Kiran Prasai of Stanford University for helpful discussions. We acknowledge the supercomputer time provided by BRIDGES at the Pittsburgh Supercomputer Center under the Extreme Science and Engineering Discovery Environment (XSEDE) supported by National Science Foundation Grant No. TG-DMR190002.
Publisher Copyright:
© 2020 American Physical Society.
PY - 2020/6
Y1 - 2020/6
N2 - In this paper, we present ab initio computer models of Cu-doped amorphous Ta2O5, a promising candidate for conducting bridge random access memory memory devices, and study the structural, electronic, charge transport, and vibrational properties based on plane-wave density-functional methods. We offer an atomistic picture of the process of phase segregation/separation between Cu and Ta2O5 subnetworks. Electronic calculations show that the models are conducting with extended Kohn-Sham orbitals around the Fermi level. In addition to that, we also characterize the electronic transport using the Kubo-Greenwood formula modified suitably to calculate the space-projected conductivity (SPC) [K. Prasai, K. N. Subedi, K. Ferris, P. Biswas, and D. A. Drabold, Phys. Stat. Solidi Rapid Res. Lett. 12, 1800238 (2018)1862-625410.1002/pssr.201800238]. Our SPC calculations show that Cu clusters and undercoordinated Ta adjoining the Cu are the conduction-active parts of the network. We also report information about the dependence of the electrical conductivity on the connectivity of the Cu submatrix. Vibrational calculations for one of the models has been undertaken with an emphasis on localization and animation of representative modes.
AB - In this paper, we present ab initio computer models of Cu-doped amorphous Ta2O5, a promising candidate for conducting bridge random access memory memory devices, and study the structural, electronic, charge transport, and vibrational properties based on plane-wave density-functional methods. We offer an atomistic picture of the process of phase segregation/separation between Cu and Ta2O5 subnetworks. Electronic calculations show that the models are conducting with extended Kohn-Sham orbitals around the Fermi level. In addition to that, we also characterize the electronic transport using the Kubo-Greenwood formula modified suitably to calculate the space-projected conductivity (SPC) [K. Prasai, K. N. Subedi, K. Ferris, P. Biswas, and D. A. Drabold, Phys. Stat. Solidi Rapid Res. Lett. 12, 1800238 (2018)1862-625410.1002/pssr.201800238]. Our SPC calculations show that Cu clusters and undercoordinated Ta adjoining the Cu are the conduction-active parts of the network. We also report information about the dependence of the electrical conductivity on the connectivity of the Cu submatrix. Vibrational calculations for one of the models has been undertaken with an emphasis on localization and animation of representative modes.
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U2 - 10.1103/PhysRevMaterials.4.064603
DO - 10.1103/PhysRevMaterials.4.064603
M3 - Article
AN - SCOPUS:85088562261
SN - 2475-9953
VL - 4
JO - Physical Review Materials
JF - Physical Review Materials
IS - 6
M1 - 064603
ER -