Structurally and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs

R. Rajesh; Jingyue Liu; H. Fathollahnejad; Ray Carpenter; G. N. Maracas

Structurally and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs

R. Rajesh, Jingyue Liu, H. Fathollahnejad, Ray Carpenter, G. N. Maracas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A low resistance non-alloyed Pd-Ge ohmic contact to epitaxially lifted-off n-type GaAs was demonstrated. The contact is formed by lifting-off partially metallized n-type GaAs films using the ELO technique, and bonding them to bilayer metallized Si by natural intermolecular forces. Low temperature annealing of this contact results in metallurgical bonding and formation of the ohmic contact. Extensive structural and chemical analysis of both as-grown and annealed material was performed using high resolution electron microscopy and scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy.

Original language	English (US)
Title of host publication	Proceedings - Annual Meeting, Microscopy Society of America
Editors	G.W. Bailey, A.J. Garratt-Reed
Pages	842-843
Number of pages	2
State	Published - 1994
Event	Proceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA Duration: Jul 31 1994 → Aug 5 1994

Other

Other	Proceedings of the 52nd Annual Meeting of the Microscopy Society of America
City	New Orleans, LA, USA
Period	7/31/94 → 8/5/94

ASJC Scopus subject areas

Engineering(all)

Cite this

Rajesh, R, Liu, J, Fathollahnejad, H, Carpenter, R & Maracas, GN 1994, Structurally and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs. in GW Bailey & AJ Garratt-Reed (eds), Proceedings - Annual Meeting, Microscopy Society of America. pp. 842-843, Proceedings of the 52nd Annual Meeting of the Microscopy Society of America, New Orleans, LA, USA, 7/31/94.

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title = "Structurally and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs",

abstract = "A low resistance non-alloyed Pd-Ge ohmic contact to epitaxially lifted-off n-type GaAs was demonstrated. The contact is formed by lifting-off partially metallized n-type GaAs films using the ELO technique, and bonding them to bilayer metallized Si by natural intermolecular forces. Low temperature annealing of this contact results in metallurgical bonding and formation of the ohmic contact. Extensive structural and chemical analysis of both as-grown and annealed material was performed using high resolution electron microscopy and scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy.",

author = "R. Rajesh and Jingyue Liu and H. Fathollahnejad and Ray Carpenter and Maracas, {G. N.}",

year = "1994",

language = "English (US)",

pages = "842--843",

editor = "G.W. Bailey and A.J. Garratt-Reed",

booktitle = "Proceedings - Annual Meeting, Microscopy Society of America",

note = "Proceedings of the 52nd Annual Meeting of the Microscopy Society of America ; Conference date: 31-07-1994 Through 05-08-1994",

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TY - GEN

T1 - Structurally and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs

AU - Rajesh, R.

AU - Liu, Jingyue

AU - Fathollahnejad, H.

AU - Carpenter, Ray

AU - Maracas, G. N.

PY - 1994

Y1 - 1994

N2 - A low resistance non-alloyed Pd-Ge ohmic contact to epitaxially lifted-off n-type GaAs was demonstrated. The contact is formed by lifting-off partially metallized n-type GaAs films using the ELO technique, and bonding them to bilayer metallized Si by natural intermolecular forces. Low temperature annealing of this contact results in metallurgical bonding and formation of the ohmic contact. Extensive structural and chemical analysis of both as-grown and annealed material was performed using high resolution electron microscopy and scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy.

AB - A low resistance non-alloyed Pd-Ge ohmic contact to epitaxially lifted-off n-type GaAs was demonstrated. The contact is formed by lifting-off partially metallized n-type GaAs films using the ELO technique, and bonding them to bilayer metallized Si by natural intermolecular forces. Low temperature annealing of this contact results in metallurgical bonding and formation of the ohmic contact. Extensive structural and chemical analysis of both as-grown and annealed material was performed using high resolution electron microscopy and scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy.

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UR - http://www.scopus.com/inward/citedby.url?scp=0028747942&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028747942

SP - 842

EP - 843

BT - Proceedings - Annual Meeting, Microscopy Society of America

A2 - Bailey, G.W.

A2 - Garratt-Reed, A.J.

T2 - Proceedings of the 52nd Annual Meeting of the Microscopy Society of America

Y2 - 31 July 1994 through 5 August 1994

ER -

Structurally and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs

Abstract

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