Structurally and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs

R. Rajesh, Jingyue Liu, H. Fathollahnejad, Ray Carpenter, G. N. Maracas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A low resistance non-alloyed Pd-Ge ohmic contact to epitaxially lifted-off n-type GaAs was demonstrated. The contact is formed by lifting-off partially metallized n-type GaAs films using the ELO technique, and bonding them to bilayer metallized Si by natural intermolecular forces. Low temperature annealing of this contact results in metallurgical bonding and formation of the ohmic contact. Extensive structural and chemical analysis of both as-grown and annealed material was performed using high resolution electron microscopy and scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy.

Original languageEnglish (US)
Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
EditorsG.W. Bailey, A.J. Garratt-Reed
Pages842-843
Number of pages2
StatePublished - 1994
EventProceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA
Duration: Jul 31 1994Aug 5 1994

Other

OtherProceedings of the 52nd Annual Meeting of the Microscopy Society of America
CityNew Orleans, LA, USA
Period7/31/948/5/94

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Rajesh, R., Liu, J., Fathollahnejad, H., Carpenter, R., & Maracas, G. N. (1994). Structurally and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs. In G. W. Bailey, & A. J. Garratt-Reed (Eds.), Proceedings - Annual Meeting, Microscopy Society of America (pp. 842-843)