Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing

Ping Chen; Mahesh Ailavajhala; Maria Mitkova; Dmitri Tenne; Ivan Sanchez Esqueda; Hugh Barnaby

doi:10.1109/WMED.2011.5767271

Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing

Ping Chen, Mahesh Ailavajhala, Maria Mitkova, Dmitri Tenne, Ivan Sanchez Esqueda, Hugh Barnaby

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.

Original language	English (US)
Title of host publication	2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011
DOIs	https://doi.org/10.1109/WMED.2011.5767271
State	Published - 2011
Event	9th IEEE Workshop on Microelectronics and Electron Devices, WMED 2011 - Boise, ID, United States Duration: Apr 22 2011 → Apr 22 2011

Publication series

Name	2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011

Other

Other	9th IEEE Workshop on Microelectronics and Electron Devices, WMED 2011
Country/Territory	United States
City	Boise, ID
Period	4/22/11 → 4/22/11

Keywords

Raman spectroscopy
chalcogenide glasses
radiation induced effects
radiation sensor
resistance change
solid electrolyte glasses

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/WMED.2011.5767271

Cite this

Chen, P., Ailavajhala, M., Mitkova, M., Tenne, D., Esqueda, I. S., & Barnaby, H. (2011). Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing. In 2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011 Article 5767271 (2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011). https://doi.org/10.1109/WMED.2011.5767271

Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing. / Chen, Ping; Ailavajhala, Mahesh; Mitkova, Maria et al.
2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011. 2011. 5767271 (2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, P, Ailavajhala, M, Mitkova, M, Tenne, D, Esqueda, IS & Barnaby, H 2011, Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing. in 2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011., 5767271, 2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011, 9th IEEE Workshop on Microelectronics and Electron Devices, WMED 2011, Boise, ID, United States, 4/22/11. https://doi.org/10.1109/WMED.2011.5767271

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abstract = "Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.",

keywords = "Raman spectroscopy, chalcogenide glasses, radiation induced effects, radiation sensor, resistance change, solid electrolyte glasses",

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AB - Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.

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Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing

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Keywords

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