Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing

Ping Chen, Mahesh Ailavajhala, Maria Mitkova, Dmitri Tenne, Ivan Sanchez Esqueda, Hugh Barnaby

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.

Original languageEnglish (US)
Title of host publication2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011
DOIs
StatePublished - 2011
Event9th IEEE Workshop on Microelectronics and Electron Devices, WMED 2011 - Boise, ID, United States
Duration: Apr 22 2011Apr 22 2011

Other

Other9th IEEE Workshop on Microelectronics and Electron Devices, WMED 2011
CountryUnited States
CityBoise, ID
Period4/22/114/22/11

Fingerprint

Solid electrolytes
Radiation
Glass
Acoustic impedance
Chemical analysis
Microelectronics
Raman scattering
Energy dispersive spectroscopy
Spectroscopy
Data storage equipment
Thin films
Sensors
Costs

Keywords

  • chalcogenide glasses
  • radiation induced effects
  • radiation sensor
  • Raman spectroscopy
  • resistance change
  • solid electrolyte glasses

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chen, P., Ailavajhala, M., Mitkova, M., Tenne, D., Esqueda, I. S., & Barnaby, H. (2011). Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing. In 2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011 [5767271] https://doi.org/10.1109/WMED.2011.5767271

Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing. / Chen, Ping; Ailavajhala, Mahesh; Mitkova, Maria; Tenne, Dmitri; Esqueda, Ivan Sanchez; Barnaby, Hugh.

2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011. 2011. 5767271.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, P, Ailavajhala, M, Mitkova, M, Tenne, D, Esqueda, IS & Barnaby, H 2011, Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing. in 2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011., 5767271, 9th IEEE Workshop on Microelectronics and Electron Devices, WMED 2011, Boise, ID, United States, 4/22/11. https://doi.org/10.1109/WMED.2011.5767271
Chen P, Ailavajhala M, Mitkova M, Tenne D, Esqueda IS, Barnaby H. Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing. In 2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011. 2011. 5767271 https://doi.org/10.1109/WMED.2011.5767271
Chen, Ping ; Ailavajhala, Mahesh ; Mitkova, Maria ; Tenne, Dmitri ; Esqueda, Ivan Sanchez ; Barnaby, Hugh. / Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing. 2011 IEEE Workshop on Microelectronics and Electron Devices, WMED 2011. 2011.
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