TY - JOUR
T1 - Structural properties of InN films grown on GaAs substrates
T2 - observation of the zincblende polytpe
AU - Strite, S.
AU - Chandrasekhar, D.
AU - Smith, David
AU - Sariel, J.
AU - Chen, H.
AU - Teraguchi, N.
AU - Morkoç, H.
N1 - Funding Information:
This work was supported by the Office for Naval Research contract #N00014-89-J-1780. Electron microscopy was conducted at the Center for High Resolution Microscopy at Arizona State University, supported by NSF Grant DMR 89-13384. The X-ray diffraction portion of this work benefitted from the use of the University of Illi nois Materials Research Laboratory’s facility which is supported by the US Department of Energy under contract DE-ACO2-76ER01198. We wish to thank M. Yoder for his enthusiasm for and encouragement of this effort and Dr. M.S. UnlU, Dr. M.E. Lin, A. Salvador, Dr. B. Sverdlov, and A.L. Demirel for their assistance at various stages of this work. S. S. wishes to acknowledge the support of an AFOSR Graduate Fellowship.
PY - 1993/2/2
Y1 - 1993/2/2
N2 - We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.
AB - We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.
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U2 - 10.1016/0022-0248(93)90605-V
DO - 10.1016/0022-0248(93)90605-V
M3 - Article
AN - SCOPUS:0027904692
VL - 127
SP - 204
EP - 208
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -