Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

S. Strite, D. Chandrasekhar, David Smith, J. Sariel, H. Chen, N. Teraguchi, H. Morkoç

Research output: Contribution to journalArticle

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Abstract

We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.

Original languageEnglish (US)
Pages (from-to)204-208
Number of pages5
JournalJournal of Crystal Growth
Volume127
Issue number1-4
DOIs
StatePublished - Feb 2 1993

Fingerprint

zincblende
Structural properties
wurtzite
Stacking faults
Substrates
Molecular beam epitaxy
X ray diffraction analysis
Lattice constants
Nucleation
Semiconductor materials
Transmission electron microscopy
Plasmas
crystal defects
molecular beam epitaxy
gallium arsenide
nucleation
transmission electron microscopy
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Structural properties of InN films grown on GaAs substrates : observation of the zincblende polytpe. / Strite, S.; Chandrasekhar, D.; Smith, David; Sariel, J.; Chen, H.; Teraguchi, N.; Morkoç, H.

In: Journal of Crystal Growth, Vol. 127, No. 1-4, 02.02.1993, p. 204-208.

Research output: Contribution to journalArticle

Strite, S, Chandrasekhar, D, Smith, D, Sariel, J, Chen, H, Teraguchi, N & Morkoç, H 1993, 'Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe', Journal of Crystal Growth, vol. 127, no. 1-4, pp. 204-208. https://doi.org/10.1016/0022-0248(93)90605-V
Strite, S. ; Chandrasekhar, D. ; Smith, David ; Sariel, J. ; Chen, H. ; Teraguchi, N. ; Morkoç, H. / Structural properties of InN films grown on GaAs substrates : observation of the zincblende polytpe. In: Journal of Crystal Growth. 1993 ; Vol. 127, No. 1-4. pp. 204-208.
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AU - Chandrasekhar, D.

AU - Smith, David

AU - Sariel, J.

AU - Chen, H.

AU - Teraguchi, N.

AU - Morkoç, H.

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AB - We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.

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