Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

S. Strite; D. Chandrasekhar; David Smith; J. Sariel; H. Chen; N. Teraguchi; H. Morkoç

doi:10.1016/0022-0248(93)90605-V

Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

S. Strite, D. Chandrasekhar, David Smith, J. Sariel, H. Chen, N. Teraguchi, H. Morkoç

CLAS-NS: Solid State Science, LeRoy Eyring Center for (CSSS)

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.

Original language	English (US)
Pages (from-to)	204-208
Number of pages	5
Journal	Journal of Crystal Growth
Volume	127
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(93)90605-V
State	Published - Feb 2 1993

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe",

abstract = "We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.",

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T1 - Structural properties of InN films grown on GaAs substrates

T2 - observation of the zincblende polytpe

AU - Strite, S.

AU - Chandrasekhar, D.

AU - Smith, David

AU - Sariel, J.

AU - Chen, H.

AU - Teraguchi, N.

AU - Morkoç, H.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.

AB - We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.

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