Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

S. Strite, D. Chandrasekhar, David Smith, J. Sariel, H. Chen, N. Teraguchi, H. Morkoç

    Research output: Contribution to journalArticlepeer-review

    91 Scopus citations

    Abstract

    We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.

    Original languageEnglish (US)
    Pages (from-to)204-208
    Number of pages5
    JournalJournal of Crystal Growth
    Volume127
    Issue number1-4
    DOIs
    StatePublished - Feb 2 1993

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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