Abstract
We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 204-208 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 127 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Feb 2 1993 |
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ASJC Scopus subject areas
- Condensed Matter Physics
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Structural properties of InN films grown on GaAs substrates : observation of the zincblende polytpe. / Strite, S.; Chandrasekhar, D.; Smith, David; Sariel, J.; Chen, H.; Teraguchi, N.; Morkoç, H.
In: Journal of Crystal Growth, Vol. 127, No. 1-4, 02.02.1993, p. 204-208.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structural properties of InN films grown on GaAs substrates
T2 - observation of the zincblende polytpe
AU - Strite, S.
AU - Chandrasekhar, D.
AU - Smith, David
AU - Sariel, J.
AU - Chen, H.
AU - Teraguchi, N.
AU - Morkoç, H.
PY - 1993/2/2
Y1 - 1993/2/2
N2 - We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.
AB - We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.
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U2 - 10.1016/0022-0248(93)90605-V
DO - 10.1016/0022-0248(93)90605-V
M3 - Article
AN - SCOPUS:0027904692
VL - 127
SP - 204
EP - 208
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -