Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

S. Strite, D. Chandrasekhar, David Smith, J. Sariel, H. Chen, N. Teraguchi, H. Morkoç

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Abstract

We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the 〈111〉 zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 ± 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 ± 0.001 nm for the wurtzite polytype.

Original languageEnglish (US)
Pages (from-to)204-208
Number of pages5
JournalJournal of Crystal Growth
Volume127
Issue number1-4
DOIs
StatePublished - Feb 2 1993

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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