Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy

Lu Ouyang; Elizabeth H. Steenbergen; Yong-Hang Zhang; Kalyan Nunna; Diana L. Huffaker; David Smith

doi:10.1116/1.3672026

Structural properties of InAs/InAs_1-xSb_x type-II superlattices grown by molecular beam epitaxy

Lu Ouyang, Elizabeth H. Steenbergen, Yong-Hang Zhang, Kalyan Nunna, Diana L. Huffaker, David Smith

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Strain-balanced InAs/InAs_1-xSb_x type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs_1-xSb_x SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs_1-xSb_x alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs_1-xSb_x layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs_1-xSb_x deposited on InAs were more abrupt, relative to InAs deposited on InAs_1-xSb_x: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions.

Original language	English (US)
Article number	02B106
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	2
DOIs	https://doi.org/10.1116/1.3672026
State	Published - Mar 2012

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1116/1.3672026

Cite this

@article{6a9a6e8fb0c34502b90ffc5b9caa6f6d,

title = "Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy",

abstract = "Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs1-xSbx SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs1-xSbx alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs1-xSbx layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs1-xSbx deposited on InAs were more abrupt, relative to InAs deposited on InAs1-xSbx: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions.",

author = "Lu Ouyang and Steenbergen, {Elizabeth H.} and Yong-Hang Zhang and Kalyan Nunna and Huffaker, {Diana L.} and David Smith",

note = "Funding Information: The work at ASU was primarily supported by the MURI Grant No. W911NF-10-1-0524 administered by U.S. Army Research Office, and monitored by William W. Clark. The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. ",

year = "2012",

month = mar,

doi = "10.1116/1.3672026",

language = "English (US)",

volume = "30",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy

AU - Ouyang, Lu

AU - Steenbergen, Elizabeth H.

AU - Zhang, Yong-Hang

AU - Nunna, Kalyan

AU - Huffaker, Diana L.

AU - Smith, David

N1 - Funding Information: The work at ASU was primarily supported by the MURI Grant No. W911NF-10-1-0524 administered by U.S. Army Research Office, and monitored by William W. Clark. The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2012/3

Y1 - 2012/3

N2 - Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs1-xSbx SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs1-xSbx alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs1-xSbx layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs1-xSbx deposited on InAs were more abrupt, relative to InAs deposited on InAs1-xSbx: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions.

AB - Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs1-xSbx SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs1-xSbx alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs1-xSbx layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs1-xSbx deposited on InAs were more abrupt, relative to InAs deposited on InAs1-xSbx: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions.

UR - http://www.scopus.com/inward/record.url?scp=84861621777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861621777&partnerID=8YFLogxK

U2 - 10.1116/1.3672026

DO - 10.1116/1.3672026

M3 - Article

AN - SCOPUS:84861621777

SN - 2166-2746

VL - 30

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 2

M1 - 02B106

ER -

Structural properties of InAs/InAs_1-xSb_x type-II superlattices grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this