Abstract

Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs1-xSbx SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs1-xSbx alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs1-xSbx layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs1-xSbx deposited on InAs were more abrupt, relative to InAs deposited on InAs1-xSbx: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions.

Original languageEnglish (US)
Article number02B106
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume30
Issue number2
DOIs
StatePublished - 2012

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Superlattices
Molecular beam epitaxy
superlattices
Structural properties
molecular beam epitaxy
Chemical analysis
High resolution electron microscopy
crystallinity
electron microscopy
Surface active agents
examination
surfactants
Infrared radiation
X ray diffraction
Wavelength
Electrons
Surface-Active Agents
high resolution
cross sections
Substrates

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy. / Ouyang, Lu; Steenbergen, Elizabeth H.; Zhang, Yong-Hang; Nunna, Kalyan; Huffaker, Diana L.; Smith, David.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 30, No. 2, 02B106, 2012.

Research output: Contribution to journalArticle

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