Structural properties of GaxIn1-xAs{plus 45 degree rule}AlyIn1-y As multiple layers

Y. H. Zhang, L. Tapfer, G. H. Lu, K. Ploog

Research output: Contribution to journalArticle

Abstract

Multilayer GaxIn1-xAs/AlyIn1-yAs structures grown on InP substrate by molecular beam epitaxy are studied by means of double-crystal X-ray diffraction (DCXD), transmission electron microscopy (TEM), and photoluminescence spectroscopy. The computer simulation of the DCXD curve of the thin modulation-doped single-quantum-well structure ( ∼ 300 nm in total thickness) reveals that it has a very high crystalline perfection. But for a PIN-diode structure of ∼2 μm in total thickness, the DCXD spectrum shows broad peaks. The TEM image of the latter structure reveals many dislocations. The comparison between the thick doped- and undoped-AlyIn1-yAs layers suggests that the heavy doping can be one of the causes of the high density of dislocations.

Original languageEnglish (US)
Pages (from-to)816-820
Number of pages5
JournalJournal of Crystal Growth
Volume127
Issue number1-4
DOIs
StatePublished - Feb 2 1993

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this