Structural properties of GaN films grown on sapphire by molecular beam epitaxy

Q. Zhu, A. Botchkarev, W. Kim, Ö Aktas, A. Salvador, B. Sverdlov, H. Morkoç, S. C Y Tsen, David Smith

Research output: Contribution to journalArticle

48 Scopus citations

Abstract

The structural characteristics of GaN films grown on sapphire substrates by molecular beam epitaxy have been investigated using high-resolution synchrotron x-ray diffraction and electron microscopy. We find remarkable correspondence between the in-plane structural order (coherence length and mosaic spread) and the electrical and optical properties. Contrary to common belief, our observations show unequivocally that the out-of-plane structural features, which are considerably better developed than the in-plane counterparts, cannot be used for determining the material quality with respect to their optical and electrical activity. In particular, the (00l) mosaic spread is not a good indicator of film quality.

Original languageEnglish (US)
Pages (from-to)1141-1143
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number8
DOIs
StatePublished - Dec 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Structural properties of GaN films grown on sapphire by molecular beam epitaxy'. Together they form a unique fingerprint.

  • Cite this

    Zhu, Q., Botchkarev, A., Kim, W., Aktas, Ö., Salvador, A., Sverdlov, B., Morkoç, H., Tsen, S. C. Y., & Smith, D. (1996). Structural properties of GaN films grown on sapphire by molecular beam epitaxy. Applied Physics Letters, 68(8), 1141-1143. https://doi.org/10.1063/1.115739