Structural origins of intrinsic stress in amorphous silicon thin films

Engineering & Materials Science

• Amorphous silicon 100%
• Thin films 69%
• Optical properties 45%
• Ions 33%
• Momentum 33%
• Optical constants 32%
• Porosity 31%
• Ion bombardment 29%
• Electronic properties 28%
• Plasma enhanced chemical vapor deposition 25%
• Hydrogen bonds 25%
• Mechanical properties 23%
• Structural properties 19%
• Electric properties 19%
• Compressive stress 19%
• Tensile stress 18%
• Materials properties 15%
• Hydrogen 14%
• Silicon 14%
• Microstructure 12%

Chemical Compounds

• Amorphous Silicon 99%
• Momentum 48%
• Liquid Film 35%
• Optical Property 26%
• Optical Constant 26%
• Ion Bombardment 23%
• Long-Range Order 23%
• Plasma Enhanced Chemical Vapour Deposition 22%
• Porosity 21%
• Pressure 21%
• Electrical Property 15%
• Electronic Property 15%
• Ion 14%
• Force 12%
• Microstructure 12%
• Hydrogen 9%
• Reduction 8%

Physics & Astronomy

• amorphous silicon 67%
• configurations 39%
• thin films 37%
• optical properties 35%
• porosity 26%
• ions 25%
• momentum 25%
• mechanical properties 24%
• hydrogen 22%
• tensile stress 18%
• bombardment 17%
• voids 15%
• vapor deposition 14%
• electrical properties 13%
• microstructure 10%
• silicon 9%
• electronics 9%
• performance 8%