TY - JOUR
T1 - Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates
T2 - II - Transmission electron microscopy and atomic force microscopy
AU - Faleev, N.
AU - Sustersic, N.
AU - Bhargava, N.
AU - Kolodzey, J.
AU - Magonov, S.
AU - Smith, David
AU - Honsberg, Christiana
PY - 2013
Y1 - 2013
N2 - The creation of crystal defects during epitaxial growth, and their proper characterization and classification are among the most critical issues impacting epitaxial structures and device applications. Epitaxial layers of different SiGe composition grown by molecular beam epitaxy (MBE) on Si(001) and Ge(001) substrates have been studied by Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM). The volumetric and surface structure of crystal defects revealed and characterized by TEM and AFM provided a detailed understanding of the major processes associated with defect creation and structural transformation during epitaxial growth. The main structural features were identified and correlations were made between crystal perfection and epitaxial growth conditions as also revealed by X-ray diffraction.
AB - The creation of crystal defects during epitaxial growth, and their proper characterization and classification are among the most critical issues impacting epitaxial structures and device applications. Epitaxial layers of different SiGe composition grown by molecular beam epitaxy (MBE) on Si(001) and Ge(001) substrates have been studied by Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM). The volumetric and surface structure of crystal defects revealed and characterized by TEM and AFM provided a detailed understanding of the major processes associated with defect creation and structural transformation during epitaxial growth. The main structural features were identified and correlations were made between crystal perfection and epitaxial growth conditions as also revealed by X-ray diffraction.
KW - A1. Characterization
KW - A1. Defects
KW - A3. Molecular beam epitaxy
KW - B1. Germanium silicon alloys
UR - http://www.scopus.com/inward/record.url?scp=84888359953&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84888359953&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2012.11.067
DO - 10.1016/j.jcrysgro.2012.11.067
M3 - Article
AN - SCOPUS:84888359953
SN - 0022-0248
VL - 365
SP - 35
EP - 43
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -