Structural investigation of the initial interface region formed by thin zirconium films on silicon (111)

A. M. Edwards, Y. Dao, Robert Nemanich, D. E. Sayers, K. M. Kemner

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A structural study of the initial interface region formed by zirconium on silicon (111) was undertaken. Thin films (100 Å) of zirconium were deposited in ultrahigh-vacuum conditions onto atomically, clean silicon (111) wafers and annealed in situ at 25°C intervals between 300 and 425°C, over which range Auger spectroscopy indicated silicon diffusion to the surface. Structural characterization of the evolving interface was performed primarily via extended x-ray-absorption fine-structure (EXAFS) measurements. Results indicate that a major structural rearrangement takes place between 350 and 375°C. EXAFS fitting analysis reveals this transition to be from a disordered-intermixed phase to a more ordered state having interatomic distances closely resembling those of ZrSi, but lower coordination numbers. Ordering continues with progressively higher annealing temperatures until the interface region assumes the ZrSi structure at ∼425°C. The results are discussed in terms of the free energy and strain of the interface film.

Original languageEnglish (US)
Pages (from-to)4630-4635
Number of pages6
JournalJournal of Applied Physics
Volume76
Issue number8
DOIs
StatePublished - 1994
Externally publishedYes

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silicon
x ray absorption
fine structure
coordination number
ultrahigh vacuum
Auger spectroscopy
free energy
wafers
intervals
annealing
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structural investigation of the initial interface region formed by thin zirconium films on silicon (111). / Edwards, A. M.; Dao, Y.; Nemanich, Robert; Sayers, D. E.; Kemner, K. M.

In: Journal of Applied Physics, Vol. 76, No. 8, 1994, p. 4630-4635.

Research output: Contribution to journalArticle

Edwards, A. M. ; Dao, Y. ; Nemanich, Robert ; Sayers, D. E. ; Kemner, K. M. / Structural investigation of the initial interface region formed by thin zirconium films on silicon (111). In: Journal of Applied Physics. 1994 ; Vol. 76, No. 8. pp. 4630-4635.
@article{2e397c74a10548be988e43a8101b6725,
title = "Structural investigation of the initial interface region formed by thin zirconium films on silicon (111)",
abstract = "A structural study of the initial interface region formed by zirconium on silicon (111) was undertaken. Thin films (100 {\AA}) of zirconium were deposited in ultrahigh-vacuum conditions onto atomically, clean silicon (111) wafers and annealed in situ at 25°C intervals between 300 and 425°C, over which range Auger spectroscopy indicated silicon diffusion to the surface. Structural characterization of the evolving interface was performed primarily via extended x-ray-absorption fine-structure (EXAFS) measurements. Results indicate that a major structural rearrangement takes place between 350 and 375°C. EXAFS fitting analysis reveals this transition to be from a disordered-intermixed phase to a more ordered state having interatomic distances closely resembling those of ZrSi, but lower coordination numbers. Ordering continues with progressively higher annealing temperatures until the interface region assumes the ZrSi structure at ∼425°C. The results are discussed in terms of the free energy and strain of the interface film.",
author = "Edwards, {A. M.} and Y. Dao and Robert Nemanich and Sayers, {D. E.} and Kemner, {K. M.}",
year = "1994",
doi = "10.1063/1.357299",
language = "English (US)",
volume = "76",
pages = "4630--4635",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Structural investigation of the initial interface region formed by thin zirconium films on silicon (111)

AU - Edwards, A. M.

AU - Dao, Y.

AU - Nemanich, Robert

AU - Sayers, D. E.

AU - Kemner, K. M.

PY - 1994

Y1 - 1994

N2 - A structural study of the initial interface region formed by zirconium on silicon (111) was undertaken. Thin films (100 Å) of zirconium were deposited in ultrahigh-vacuum conditions onto atomically, clean silicon (111) wafers and annealed in situ at 25°C intervals between 300 and 425°C, over which range Auger spectroscopy indicated silicon diffusion to the surface. Structural characterization of the evolving interface was performed primarily via extended x-ray-absorption fine-structure (EXAFS) measurements. Results indicate that a major structural rearrangement takes place between 350 and 375°C. EXAFS fitting analysis reveals this transition to be from a disordered-intermixed phase to a more ordered state having interatomic distances closely resembling those of ZrSi, but lower coordination numbers. Ordering continues with progressively higher annealing temperatures until the interface region assumes the ZrSi structure at ∼425°C. The results are discussed in terms of the free energy and strain of the interface film.

AB - A structural study of the initial interface region formed by zirconium on silicon (111) was undertaken. Thin films (100 Å) of zirconium were deposited in ultrahigh-vacuum conditions onto atomically, clean silicon (111) wafers and annealed in situ at 25°C intervals between 300 and 425°C, over which range Auger spectroscopy indicated silicon diffusion to the surface. Structural characterization of the evolving interface was performed primarily via extended x-ray-absorption fine-structure (EXAFS) measurements. Results indicate that a major structural rearrangement takes place between 350 and 375°C. EXAFS fitting analysis reveals this transition to be from a disordered-intermixed phase to a more ordered state having interatomic distances closely resembling those of ZrSi, but lower coordination numbers. Ordering continues with progressively higher annealing temperatures until the interface region assumes the ZrSi structure at ∼425°C. The results are discussed in terms of the free energy and strain of the interface film.

UR - http://www.scopus.com/inward/record.url?scp=3743093285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3743093285&partnerID=8YFLogxK

U2 - 10.1063/1.357299

DO - 10.1063/1.357299

M3 - Article

VL - 76

SP - 4630

EP - 4635

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -